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Title: Hybrid nanomaterials from hierarchical self-assembly of nanoparticles and clusters on diblock copolymer films.

Abstract

No abstract prepared.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF)
OSTI Identifier:
920005
Report Number(s):
ANL/MSD/JA-60558
TRN: US200822%%504
DOE Contract Number:
DE-AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Polymeric Mater.: Sci. & Eng.; Journal Volume: 96; Journal Issue: 2007
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; COPOLYMERS; FILMS; NANOSTRUCTURES; SYNTHESIS

Citation Formats

Darling, S. B., Hoffmann, A., Yufa, N. A., Bader, S. D., Sibener, S. J., and Univ. Chicago. Hybrid nanomaterials from hierarchical self-assembly of nanoparticles and clusters on diblock copolymer films.. United States: N. p., 2007. Web.
Darling, S. B., Hoffmann, A., Yufa, N. A., Bader, S. D., Sibener, S. J., & Univ. Chicago. Hybrid nanomaterials from hierarchical self-assembly of nanoparticles and clusters on diblock copolymer films.. United States.
Darling, S. B., Hoffmann, A., Yufa, N. A., Bader, S. D., Sibener, S. J., and Univ. Chicago. Mon . "Hybrid nanomaterials from hierarchical self-assembly of nanoparticles and clusters on diblock copolymer films.". United States. doi:.
@article{osti_920005,
title = {Hybrid nanomaterials from hierarchical self-assembly of nanoparticles and clusters on diblock copolymer films.},
author = {Darling, S. B. and Hoffmann, A. and Yufa, N. A. and Bader, S. D. and Sibener, S. J. and Univ. Chicago},
abstractNote = {No abstract prepared.},
doi = {},
journal = {Polymeric Mater.: Sci. & Eng.},
number = 2007,
volume = 96,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • A long-range ordered lamellae-within-lamellae hierarchical structure is reported for the first time through the directed self-assembly of supramolecular polymer-surfactant thin films on chemical patterns with density multiplication. The coassembly of supramolecular system with gold nanoparticles is further achieved to create a hybrid material with well-organized nanoparticle arrays, expanding the palette of morphologies and structures available for nanoscale fabrication.
  • We have synthesized {pi}-conjugated poly(3-hexyl thiophene)-block-poly(methyl methacrylate) (P3HT-b-PMMA) with a P3HT molecular weight of 11 kDa and a PMMA volume fraction of 0.53, which potentially has several organic electronic applications. Its phase-separation behavior was investigated for various thicknesses cast from organic solvents. When cast onto 300 nm thick SiO{sub 2} dielectrics from toluene, in which the P3HT segments have limited solubility, the P3HT-b-PMMA films consist of nanofibrillar self-assemblies of laterally {pi}-stacked P3HT chains. In contrast, the P3HT segments were found to be highly mobile in chlorobenzene, generating a typical phase-separation morphology consisting of vertically conducting P3HT nanodomains on these dielectrics.more » As the thickness of the cast films increased, however, the topmost surface becomes covered with {pi}-conjugated nanofibrils that are laterally oriented with respect to the surface. Due to the anisotropic domain orientations of P3HT, top-gate organic field-effect transistors (OFETs) containing the P3HT-b-PMMA films exhibited enhanced electrical performance compared to bottom-gate OFETs.« less
  • No abstract prepared.
  • Self-assembling diblock copolymer, polystyrene-b-poly-4-vinylpyridine (PS-b-P4VP), was used as the template for fabricating phase change nanostructures. The high density GeSb nanodots were formed by etching into an amorphous GeSb thin film using silica hard mask which was patterned on top of polymer. The nanodot arrays are 15 nm in diameter with 30 nm spacing. This is smaller than most structures obtained by e-beam lithography. Time-resolved x-ray diffraction studies showed that the phase transition occurred at 235 {sup o}C, which is 5 {sup o}C lower than blanket GeSb film but higher than that of Ge{sub 2}Sb{sub 2}Te{sub 5} (150 {sup o}C). GeSbmore » showed good temperature stability for fabrication of small memory devices.« less