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Title: III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

Abstract

The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and havemore » achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.« less

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
918384
Report Number(s):
SAND2003-4287
TRN: US200818%%374
DOE Contract Number:
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; ALLOYS; COMMUNICATIONS; EFFICIENCY; ELECTROLUMINESCENCE; EXCITONS; OPTICAL FIBERS; SANDIA NATIONAL LABORATORIES; SEMICONDUCTOR DEVICES; SOLAR CELLS; SUBSTRATES; TARGETS; TRANSPORT; WAVELENGTHS

Citation Formats

Kurtz, Steven Ross, Hargett, Terry W., Serkland, Darwin Keith, Waldrip, Karen Elizabeth, Modine, Normand Arthur, Klem, John Frederick, Jones, Eric Daniel, Cich, Michael Joseph, Allerman, Andrew Alan, and Peake, Gregory Merwin. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.. United States: N. p., 2003. Web. doi:10.2172/918384.
Kurtz, Steven Ross, Hargett, Terry W., Serkland, Darwin Keith, Waldrip, Karen Elizabeth, Modine, Normand Arthur, Klem, John Frederick, Jones, Eric Daniel, Cich, Michael Joseph, Allerman, Andrew Alan, & Peake, Gregory Merwin. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.. United States. doi:10.2172/918384.
Kurtz, Steven Ross, Hargett, Terry W., Serkland, Darwin Keith, Waldrip, Karen Elizabeth, Modine, Normand Arthur, Klem, John Frederick, Jones, Eric Daniel, Cich, Michael Joseph, Allerman, Andrew Alan, and Peake, Gregory Merwin. Mon . "III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.". United States. doi:10.2172/918384. https://www.osti.gov/servlets/purl/918384.
@article{osti_918384,
title = {III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.},
author = {Kurtz, Steven Ross and Hargett, Terry W. and Serkland, Darwin Keith and Waldrip, Karen Elizabeth and Modine, Normand Arthur and Klem, John Frederick and Jones, Eric Daniel and Cich, Michael Joseph and Allerman, Andrew Alan and Peake, Gregory Merwin},
abstractNote = {The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.},
doi = {10.2172/918384},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Dec 01 00:00:00 EST 2003},
month = {Mon Dec 01 00:00:00 EST 2003}
}

Technical Report:

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  • Two main objectives of this research program include: (1) investigation of the fundamental material, transport, and optical properties of III-V nitrides; and (2) simulation and design optimization of GaN-based optoelectronic devices. Study of fundamental physical properties (such as carrier scattering and optical transitions) is based on an envelope function formalism for accurate description of band spectrum in bulk and confined structures. Numerical analyses and optimization of GaN-based devices are approached by solving a set of coupled equations self-consistently. This research initiative has provided valuable insight for the development and optimization of III-V nitride optoelectronic devices, particularly, blue/UV quantum well lasers.
  • Measurements of the hole density in heavily carbon-doped GaAs and A1x,Gal-xAs as a function of the annealing temperature are presented. It is shown that the hole density increases and the hole mobility decreases after annealing at low temperatures (T < 550 deg C). However, higher annealing temperatures (T > 600 deg C) result in a reduction of the hole concentration reaching a maximum carrier concentration of = 5 x 1019 cm-3. These changes observed in the electrical properties can be explained by two mechanisms: (1) the passivation of carbon acceptors by hydrogen incorporated during growth; and (2) the change inmore » the lattice site location of carbon atoms, which is dependent on the total carbon concentration.« less
  • This report describes the research accomplishments achieved under the LDRD Project 'Radiation Hardened Optoelectronic Components for Space-Based Applications.' The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs andmore » photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons.« less
  • The fundamental spontaneous emission rate for a photon source can be modified by placing the emitter inside a periodic dielectric structure allowing the emission to be dramatically enhanced or suppressed depending on the intended application. We have investigated the relatively unexplored realm of interaction between semiconductor emitters and three dimensional photonic crystals in the visible spectrum. Although this interaction has been investigated at longer wavelengths, very little work has been done in the visible spectrum. During the course of this LDRD, we have fabricated TiO{sub 2} logpile photonic crystal structures with the shortest wavelength band gap ever demonstrated. A varietymore » of different emitters with emission between 365 nm and 700 nm were incorporated into photonic crystal structures. Time-integrated and time-resolved photoluminescence measurements were performed to measure changes to the spontaneous emission rate. Both enhanced and suppressed emission were demonstrated and attributed to changes to the photonic density of states.« less
  • The proposed work seeks to demonstrate and understand new phenomena in novel, freestanding III-nitride core-shell nanowires, including 1D and 2D electron gas formation and properties, and to investigate the role of surfaces and heterointerfaces on the transport and optical properties of nanowires, using a combined experimental and theoretical approach. Obtaining an understanding of these phenomena will be a critical step that will allow development of novel, ultrafast and ultraefficient nanowire-based electronic and photonic devices.