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Title: Detectability and printability of EUVL mask blank defects for the32 nm HP node

Abstract

The readiness of a defect-free extreme ultraviolet lithography (EUVL) mask blank infrastructure is one of the main enablers for the insertion of EUVL technology into production. It is essential to have sufficient defect detection capability and understanding of defect printability to develop a defect-free EUVL mask blank infrastructure. The SEMATECH Mask Blank Development Center (MBDC) has been developing EUVL mask blanks with low defect densities with the Lasertec M1350 and M7360, the 1st and 2nd generations, respectively, of visible light EUVL mask blank inspection tools. Although the M7360 represents a significant improvement in our defect detection capability, it is time to start developing a 3rd generation tool for EUVL mask blank inspection. The goal of this tool is to detect all printable defects; therefore, understanding defect printability criteria is critical to this tool development. In this paper, we will investigate the defect detectability of a 2nd generation blank inspection tool and a patterned EUVL mask inspection tool. We will also compare the ability of the inspection tools to detect programmed defects whose printability has been estimated from wafer printing results and actinic aerial images results.

Authors:
; ; ; ;
Publication Date:
Research Org.:
COLLABORATION -SEMATECH
Sponsoring Org.:
USDOE
OSTI Identifier:
918124
Report Number(s):
LBNL-63508
TRN: US200817%%935
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Conference
Resource Relation:
Conference: SPIE Photomask BACUS, Monterey, CA, September18-19, 2007
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; DEFECTS; DETECTION; PRODUCTION; INTEGRATED CIRCUITS; EXTREME ULTRAVIOLET RADIATION; MASKING; IN-SERVICE INSPECTION

Citation Formats

Cho, Wonil, Han, Hak-Seung, Goldberg, Kenneth A, Kearney, Patrick A, and Jeon, Chan-Uk. Detectability and printability of EUVL mask blank defects for the32 nm HP node. United States: N. p., 2007. Web.
Cho, Wonil, Han, Hak-Seung, Goldberg, Kenneth A, Kearney, Patrick A, & Jeon, Chan-Uk. Detectability and printability of EUVL mask blank defects for the32 nm HP node. United States.
Cho, Wonil, Han, Hak-Seung, Goldberg, Kenneth A, Kearney, Patrick A, and Jeon, Chan-Uk. Wed . "Detectability and printability of EUVL mask blank defects for the32 nm HP node". United States. https://www.osti.gov/servlets/purl/918124.
@article{osti_918124,
title = {Detectability and printability of EUVL mask blank defects for the32 nm HP node},
author = {Cho, Wonil and Han, Hak-Seung and Goldberg, Kenneth A and Kearney, Patrick A and Jeon, Chan-Uk},
abstractNote = {The readiness of a defect-free extreme ultraviolet lithography (EUVL) mask blank infrastructure is one of the main enablers for the insertion of EUVL technology into production. It is essential to have sufficient defect detection capability and understanding of defect printability to develop a defect-free EUVL mask blank infrastructure. The SEMATECH Mask Blank Development Center (MBDC) has been developing EUVL mask blanks with low defect densities with the Lasertec M1350 and M7360, the 1st and 2nd generations, respectively, of visible light EUVL mask blank inspection tools. Although the M7360 represents a significant improvement in our defect detection capability, it is time to start developing a 3rd generation tool for EUVL mask blank inspection. The goal of this tool is to detect all printable defects; therefore, understanding defect printability criteria is critical to this tool development. In this paper, we will investigate the defect detectability of a 2nd generation blank inspection tool and a patterned EUVL mask inspection tool. We will also compare the ability of the inspection tools to detect programmed defects whose printability has been estimated from wafer printing results and actinic aerial images results.},
doi = {},
url = {https://www.osti.gov/biblio/918124}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {8}
}

Conference:
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