The effects of chloride implantation on pit initiation in aluminum.
High-purity aluminum samples were implanted with 35 keV Cl{sup +} then polarized in both Cl{sup -}-containing and Cl{sup -}-free electrolytes in order to ascertain corrosion behavior as a function of Cl{sup -} content in the oxide. Implant fluence between 5 x 10{sup 15} and 2 x 10{sup 16} Cl{sup +} cm{sup -2} resulted in little or no localized attack. Implant fluences of 3 x 10{sup 16} and 5 x 10{sup 16} Cl{sup +} cm{sup -2} resulted in significant pitting in a Cl{sup -}-free electrolyte with the severity scaling as a function of implant fluence. The low variability in the pitting behavior of the 5 x 10{sup 16} Cl{sup +} cm{sup -2} sample suggests that this implant dosage results in a critical Cl{sup -} concentration in the oxide for pit nucleation. The passive current density (i{sub pass}) decreased with increasing implant fluence. A space-charge effect is proposed to account for this phenomenon, although effects from defect interactions and possible oxide thickening are still under consideration.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 917472
- Report Number(s):
- SAND2003-0907J; TRN: US200817%%602
- Journal Information:
- Proposed for publication in the Journal of the Electrochemical Society., Journal Name: Proposed for publication in the Journal of the Electrochemical Society.
- Country of Publication:
- United States
- Language:
- English
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