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Title: Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
915666
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 24, 2007
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; NITROGEN; SOLAR CELLS; INDIUM COMPOUNDS; Solar Energy - Photovoltaics

Citation Formats

Khan, A., Kurtz, S. R., Prasad, S., Johnston, S. W., and Gou, J. Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties. United States: N. p., 2007. Web. doi:10.1063/1.2747664.
Khan, A., Kurtz, S. R., Prasad, S., Johnston, S. W., & Gou, J. Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties. United States. doi:10.1063/1.2747664.
Khan, A., Kurtz, S. R., Prasad, S., Johnston, S. W., and Gou, J. Mon . "Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties". United States. doi:10.1063/1.2747664.
@article{osti_915666,
title = {Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties},
author = {Khan, A. and Kurtz, S. R. and Prasad, S. and Johnston, S. W. and Gou, J.},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.2747664},
journal = {Applied Physics Letters},
number = 24, 2007,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • The authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron irradiation. In addition, 1 MeV electron irradiation induced a hole trap H1 at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. A correlation exists between the recovery of free carrier concentration andmore » recovery of the E1 center to preradiation concentrations, which indicates the possibility of the E1 as an acceptorlike center.« less
  • Deep level traps in as-grown and annealed n-GaNAs layers (doped with Si) of various nitrogen concentrations (N=0.2%, 0.4%, 0.8%, and 1.2%) were investigated by deep level transient spectroscopy. In addition, optical properties of GaNAs layers were studied by photoluminescence and contactless electroreflectance. The identification of N- and host-related traps has been performed on the basis of band gap diagram [Kudrawiec, Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of electron traps of the same microscopic nature decreases with the rise of nitrogen concentration in accordance with the N-related shift of the conduction band towards trap levels.more » The application of this diagram has allowed to investigate the evolution of donor traps in GaNAs upon annealing. In general, it was observed that the concentration of N- and host-related traps decreases after annealing and PL improves very significantly. However, it was also observed that some traps are generated due to annealing. It explains why the annealing conditions have to be carefully optimized for this material system.« less
  • Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge.
  • Electron and hole transport in compensated InGaAsN ({approx_equal}2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge. (c) 2000 American Institute of Physics.