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Title: Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
915666
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 24, 2007
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; NITROGEN; SOLAR CELLS; INDIUM COMPOUNDS; Solar Energy - Photovoltaics

Citation Formats

Khan, A., Kurtz, S. R., Prasad, S., Johnston, S. W., and Gou, J.. Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties. United States: N. p., 2007. Web. doi:10.1063/1.2747664.
Khan, A., Kurtz, S. R., Prasad, S., Johnston, S. W., & Gou, J.. Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties. United States. doi:10.1063/1.2747664.
Khan, A., Kurtz, S. R., Prasad, S., Johnston, S. W., and Gou, J.. Mon . "Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties". United States. doi:10.1063/1.2747664.
@article{osti_915666,
title = {Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties},
author = {Khan, A. and Kurtz, S. R. and Prasad, S. and Johnston, S. W. and Gou, J.},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.2747664},
journal = {Applied Physics Letters},
number = 24, 2007,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}