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Title: Bismuth Surfactant Effects for GaAsN and Beryllium Doping of GaAsN and GaInAsN Grown by Molecular Beam Epitaxy

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
915662
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Crystal Growth; Journal Volume: 304; Journal Issue: 2, 2007
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; BERYLLIUM; BISMUTH; MOLECULAR BEAM EPITAXY; SURFACTANTS; Solar Energy - Photovoltaics

Citation Formats

Liu, T., Chandril, S., Ptak, A. J., Korakakis, D., and Myers, T. H.. Bismuth Surfactant Effects for GaAsN and Beryllium Doping of GaAsN and GaInAsN Grown by Molecular Beam Epitaxy. United States: N. p., 2007. Web. doi:10.1016/j.jcrysgro.2007.04.013.
Liu, T., Chandril, S., Ptak, A. J., Korakakis, D., & Myers, T. H.. Bismuth Surfactant Effects for GaAsN and Beryllium Doping of GaAsN and GaInAsN Grown by Molecular Beam Epitaxy. United States. doi:10.1016/j.jcrysgro.2007.04.013.
Liu, T., Chandril, S., Ptak, A. J., Korakakis, D., and Myers, T. H.. Mon . "Bismuth Surfactant Effects for GaAsN and Beryllium Doping of GaAsN and GaInAsN Grown by Molecular Beam Epitaxy". United States. doi:10.1016/j.jcrysgro.2007.04.013.
@article{osti_915662,
title = {Bismuth Surfactant Effects for GaAsN and Beryllium Doping of GaAsN and GaInAsN Grown by Molecular Beam Epitaxy},
author = {Liu, T. and Chandril, S. and Ptak, A. J. and Korakakis, D. and Myers, T. H.},
abstractNote = {No abstract prepared.},
doi = {10.1016/j.jcrysgro.2007.04.013},
journal = {Journal of Crystal Growth},
number = 2, 2007,
volume = 304,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}