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Title: Structural Instability of Sn-Doped In2O3 Thin Films During Thermal Annealing at Low Temperature

Abstract

We report on observations of structural stability of Sn-doped In{sub 2}O{sub 3} (ITO) thin films during thermal annealing at low temperature. The ITO thin films were deposited by radio-frequency magnetron sputtering at room temperature. Transmission electron microscopy analysis revealed that the as-deposited ITO thin films are nanocrystalline. After thermal annealing in a He atmosphere at 250 C for 30 min, recrystallization, coalescence, and agglomeration of grains were observed. We further found that nanovoids formed in the annealed ITO thin films. The majority of the nanovoids are distributed along the locations of the original grain boundaries. These nanovoids divide the agglomerated larger grains into small coherent domains.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
915661
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Thin Solid Films; Journal Volume: 515; Journal Issue: 17, 2007
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; AGGLOMERATION; ANNEALING; COALESCENCE; GRAIN BOUNDARIES; INSTABILITY; MAGNETRONS; RECRYSTALLIZATION; SPUTTERING; STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; Solar Energy - Photovoltaics

Citation Formats

Yan, Y., Zhou, J., Wu, X. Z., Moutinho, H. R., and Al-Jassim, M. M. Structural Instability of Sn-Doped In2O3 Thin Films During Thermal Annealing at Low Temperature. United States: N. p., 2007. Web. doi:10.1016/j.tsf.2007.01.040.
Yan, Y., Zhou, J., Wu, X. Z., Moutinho, H. R., & Al-Jassim, M. M. Structural Instability of Sn-Doped In2O3 Thin Films During Thermal Annealing at Low Temperature. United States. doi:10.1016/j.tsf.2007.01.040.
Yan, Y., Zhou, J., Wu, X. Z., Moutinho, H. R., and Al-Jassim, M. M. Mon . "Structural Instability of Sn-Doped In2O3 Thin Films During Thermal Annealing at Low Temperature". United States. doi:10.1016/j.tsf.2007.01.040.
@article{osti_915661,
title = {Structural Instability of Sn-Doped In2O3 Thin Films During Thermal Annealing at Low Temperature},
author = {Yan, Y. and Zhou, J. and Wu, X. Z. and Moutinho, H. R. and Al-Jassim, M. M.},
abstractNote = {We report on observations of structural stability of Sn-doped In{sub 2}O{sub 3} (ITO) thin films during thermal annealing at low temperature. The ITO thin films were deposited by radio-frequency magnetron sputtering at room temperature. Transmission electron microscopy analysis revealed that the as-deposited ITO thin films are nanocrystalline. After thermal annealing in a He atmosphere at 250 C for 30 min, recrystallization, coalescence, and agglomeration of grains were observed. We further found that nanovoids formed in the annealed ITO thin films. The majority of the nanovoids are distributed along the locations of the original grain boundaries. These nanovoids divide the agglomerated larger grains into small coherent domains.},
doi = {10.1016/j.tsf.2007.01.040},
journal = {Thin Solid Films},
number = 17, 2007,
volume = 515,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}