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Title: Photoelectrochemical Properties of N-Incorporated ZnO Films Deposited by Reactive RF Magnetron Sputtering

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
915660
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of the Electrochemical Society; Journal Volume: 154; Journal Issue: 9, 2007
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; MAGNETRONS; SPUTTERING; ZINC OXIDES; FILMS; Solar Energy - Photovoltaics

Citation Formats

Ahn, K. S., Yan, Y., Lee, S. H., Deutsch, T., Turner, J., Tracy, C. E., Perkins, C. L., and Al-Jassim, M.. Photoelectrochemical Properties of N-Incorporated ZnO Films Deposited by Reactive RF Magnetron Sputtering. United States: N. p., 2007. Web. doi:10.1149/1.2754074.
Ahn, K. S., Yan, Y., Lee, S. H., Deutsch, T., Turner, J., Tracy, C. E., Perkins, C. L., & Al-Jassim, M.. Photoelectrochemical Properties of N-Incorporated ZnO Films Deposited by Reactive RF Magnetron Sputtering. United States. doi:10.1149/1.2754074.
Ahn, K. S., Yan, Y., Lee, S. H., Deutsch, T., Turner, J., Tracy, C. E., Perkins, C. L., and Al-Jassim, M.. Mon . "Photoelectrochemical Properties of N-Incorporated ZnO Films Deposited by Reactive RF Magnetron Sputtering". United States. doi:10.1149/1.2754074.
@article{osti_915660,
title = {Photoelectrochemical Properties of N-Incorporated ZnO Films Deposited by Reactive RF Magnetron Sputtering},
author = {Ahn, K. S. and Yan, Y. and Lee, S. H. and Deutsch, T. and Turner, J. and Tracy, C. E. and Perkins, C. L. and Al-Jassim, M.},
abstractNote = {No abstract prepared.},
doi = {10.1149/1.2754074},
journal = {Journal of the Electrochemical Society},
number = 9, 2007,
volume = 154,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • Ti-Si-N nanocomposite films with Si content between 0 and 13.5 at. % were deposited by combined DC/RF reactive unbalanced magnetron sputtering. The composition, structure, and mechanical properties of the as-deposited Ti-Si-N films were measured by energy dispersive analysis of x rays, x-ray diffraction (XRD), and nanoindentation experiments, respectively. All of the Ti-Si-N films exhibited a higher hardness than pure TiN films deposited under similar conditions. The highest hardness ({approx}41 GPa) was obtained in the film with Si content of about 8 at. %. Ti-Si-N films also exhibited a higher resistance to plastic deformation (i.e., higher ratio H{sup 3}/E*{sup 2}) thanmore » pure TiN. XRD patterns revealed that the as-deposited films were composed of cubic TiN crystallites with a preferential orientation of (111). With increase of RF power applied to the Si targets, the TiN (111) peak intensity or TiN crystallite size increased in the lower RF power range but decreased in the higher RF power range, showing a maximum at an RF power of 500 W (power density {approx}1.14 W/cm{sup 2}), corresponding to a Si content of about 5 at. % in the film.« less
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