skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Photoelectric and Spectral Properties of ZnO Thin Films

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
915634
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Optoelectronics and Advanced Materials; Journal Volume: 9; Journal Issue: 5, May 2007
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; THIN FILMS; ZINC OXIDES; PHOTOELECTRIC EFFECT; Solar Energy - Photovoltaics

Citation Formats

Aghamalyan, N. R., Hovsepy, R. K., Poghosyan, A. R., von Roedern, B., and Vardanyan, E. S. Photoelectric and Spectral Properties of ZnO Thin Films. United States: N. p., 2007. Web.
Aghamalyan, N. R., Hovsepy, R. K., Poghosyan, A. R., von Roedern, B., & Vardanyan, E. S. Photoelectric and Spectral Properties of ZnO Thin Films. United States.
Aghamalyan, N. R., Hovsepy, R. K., Poghosyan, A. R., von Roedern, B., and Vardanyan, E. S. Tue . "Photoelectric and Spectral Properties of ZnO Thin Films". United States. doi:.
@article{osti_915634,
title = {Photoelectric and Spectral Properties of ZnO Thin Films},
author = {Aghamalyan, N. R. and Hovsepy, R. K. and Poghosyan, A. R. and von Roedern, B. and Vardanyan, E. S.},
abstractNote = {No abstract prepared.},
doi = {},
journal = {Journal of Optoelectronics and Advanced Materials},
number = 5, May 2007,
volume = 9,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}
}
  • Measurements were made on evaporated thin films of Al, Sn, In, Bi, Au, Ag, and Cd in ordcr to correlate optical transmissions reflection, and photoemission in the far ultraviolet. Thin unbacked films prepared outside the spectrograph and glass-backed films prepared inside the spectrograph were used. The frequency at which the films change from a reflecting medium to a transmitting medium has been compared with the plasma frequency predicted by Bohm and Pines and also with electron energy eigenlosses in metals observed by Marton et al. Some new absorption transitions were observed and related to x-ray absorption edges. A qualitative correlationmore » between the photoelectric yields and corresponding optical properties were attempted. (auth)« less
  • Cerium doped CuInS{sub 2} thin films were successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron microscope measurements showed that the as-prepared CuIn{sub 1−x}Ce{sub x}S{sub 2} samples are of good crystallinity and crystallize with chalcopyrite structure when sintering at 550 °C. The presence of Ce{sup 3+} in host material was conformed by X-ray photoelectron spectroscopy. Two subband photon absorption peaks were observed at 1710 nm (0.73 eV) and 1955 nm (0.63 eV) in the UV–Vis–NIR absorption spectrum. This behavior could suggest that an intermediate band forms in the forbidden band of CuInS{sub 2} semiconductor due to cerium incorporation. The optical bandgap ofmore » CuIn{sub 1−x}Ce{sub x}S{sub 2} films was tuned in the range of 1.38 eV to 1.23 eV with increasing cerium content. And the electrical conductivity could be improved if doped moderate cerium content, especially x = 0.1.« less
  • ZnO nanowires arrays were preformed in a horizontal double-tube system. Two types of heterostructures (ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} and ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9}) and three-dimensional solar cells were fabricated with ZnO nanowires arrays as working electrode, In{sub 2}O{sub 3} as buffer layer, and Cu{sub 4}Bi{sub 4}S{sub 9} as inorganic dye and hole collector. It is suggested that two types of heterostructures have the similar absorption properties with single Cu{sub 4}Bi{sub 4}S{sub 9}. However, the results of steady state and electric field-induced surface photovoltage indicate that ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9} exhibits the higher photovoltaicmore » response than ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9}. Using the transient surface photovoltage spectroscopy, we further studied the separation and transport mechanism of photogenerated charges. Furthermore, Cu{sub 4}Bi{sub 4}S{sub 9}/In{sub 2}O{sub 3}/ZnO cells presents the better performance than Cu{sub 4}Bi{sub 4}S{sub 9}/ZnO cells and the highest efficiencies are about 6.4% and 5.2%, respectively. It is suggested that direct paths, interface barrier, built-in electric field, and double energy level matchings between conduction bands (Cu{sub 4}Bi{sub 4}S{sub 9} and In{sub 2}O{sub 3}, In{sub 2}O{sub 3} and ZnO) have obvious effect on the separation of photogenerated charges. Then we discussed the synthetic action on the charge dynamics from these factors.« less
  • Combinatorial laser molecular-beam epitaxy method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal (TM) ions in a high throughput fashion. The solubility behavior of TM ions was discussed from the viewpoints of the ionic radius and valence state. The magneto-optical responses coincident with absorption spectra were observed for Mn- and Co-doped samples. Cathodoluminescence spectra were studied for Cr-, Mn-, Fe-, and Co-doped samples, among which Cr-doped ZnO showed two sharp peaks at 2.97 eV and 3.71 eV, respectively, at the expense of the exciton emission peak of pure ZnO at 3.25 eV. Differentmore » magnetoresistance behavior was observed for the samples codoped with n-type carriers. Ferromagnetism was not observed for Cr- to Cu-doped samples down to 3 K. {copyright} 2001 American Institute of Physics.« less
  • c-Axis oriented thin films of (ZnO){sub 5}In{sub 2}O{sub 3} of 0.5 {micro}m thickness were deposited on glass substrates by a radio-frequency-sputtering method. The thin films had dense columnar structures and were highly transparent in the ultraviolet-visible region, simultaneously showing low electrical resistivity. The refractive index was about 2. The lowest resistivity, 1.3 {times} 10{sup {minus}3} {Omega} cm at room temperature, was obtained by reducing the deposited film at 540 C in N{sub 2} containing 3.4% H{sub 2} The corresponding carrier concentration and Hall mobility were 1.9 {times} 10{sup 20} cm{sup {minus}3} and 25.6 cm{sup 2}/Vs, respectively. Detailed analyses of themore » optical transmittance spectra gave rise to the intrinsic band gap and the reduced mass of carriers to be 3.12 eV and 0.67 m{sub 0}, respectively.« less