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Title: Chemical Properties of the Cu(In,Ga)Se2/Mo/glass Interfaces in Thin Film Solar Cells

Abstract

The Cu(In,Ga)Se{sub 2}/Mo and the Mo/glass interfaces in high efficiency thin film solar cells have been investigated by surface-sensitive photoelectron spectroscopy and bulk-sensitive X-ray emission spectroscopy. The interfaces were accessed by a suitable lift-off technique. Our experiments show a strong Se diffusion from the absorber into the Mo film, suggesting the formation of a MoSe{sub 2} layer in the surface-near region of the back contact. In addition, we find a Ga diffusion into the Mo back contact, while no diffusion of In and Cu occurs. Furthermore, we derive a detailed picture of the Na distribution near the back and front side of the Cu(In,Ga)Se{sub 2} absorber.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
915632
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Thin Solid Films; Journal Volume: 515; Journal Issue: 2007
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CHEMICAL PROPERTIES; DIFFUSION; DISTRIBUTION; EFFICIENCY; EMISSION SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY; SOLAR CELLS; THIN FILMS; Solar Energy - Photovoltaics

Citation Formats

Weinhardt, L., Blum, M., Bar, M., Heske, C., Fuchs, O., Umbach, E., Denlinger, J. D., Ramanathan, K., and Noufi, R.. Chemical Properties of the Cu(In,Ga)Se2/Mo/glass Interfaces in Thin Film Solar Cells. United States: N. p., 2007. Web. doi:10.1016/j.tsf.2006.12.109.
Weinhardt, L., Blum, M., Bar, M., Heske, C., Fuchs, O., Umbach, E., Denlinger, J. D., Ramanathan, K., & Noufi, R.. Chemical Properties of the Cu(In,Ga)Se2/Mo/glass Interfaces in Thin Film Solar Cells. United States. doi:10.1016/j.tsf.2006.12.109.
Weinhardt, L., Blum, M., Bar, M., Heske, C., Fuchs, O., Umbach, E., Denlinger, J. D., Ramanathan, K., and Noufi, R.. Mon . "Chemical Properties of the Cu(In,Ga)Se2/Mo/glass Interfaces in Thin Film Solar Cells". United States. doi:10.1016/j.tsf.2006.12.109.
@article{osti_915632,
title = {Chemical Properties of the Cu(In,Ga)Se2/Mo/glass Interfaces in Thin Film Solar Cells},
author = {Weinhardt, L. and Blum, M. and Bar, M. and Heske, C. and Fuchs, O. and Umbach, E. and Denlinger, J. D. and Ramanathan, K. and Noufi, R.},
abstractNote = {The Cu(In,Ga)Se{sub 2}/Mo and the Mo/glass interfaces in high efficiency thin film solar cells have been investigated by surface-sensitive photoelectron spectroscopy and bulk-sensitive X-ray emission spectroscopy. The interfaces were accessed by a suitable lift-off technique. Our experiments show a strong Se diffusion from the absorber into the Mo film, suggesting the formation of a MoSe{sub 2} layer in the surface-near region of the back contact. In addition, we find a Ga diffusion into the Mo back contact, while no diffusion of In and Cu occurs. Furthermore, we derive a detailed picture of the Na distribution near the back and front side of the Cu(In,Ga)Se{sub 2} absorber.},
doi = {10.1016/j.tsf.2006.12.109},
journal = {Thin Solid Films},
number = 2007,
volume = 515,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}