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Title: Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti){sub 3} thin films.

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ; ;  [1];
  1. (APS)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC); NFS
OSTI Identifier:
914791
Report Number(s):
ANL/XFD/JA-56360
Journal ID: ISSN 0031-9007; PRLTAO; TRN: US200812%%67
DOE Contract Number:
DE-AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Phys. Rev. Lett.; Journal Volume: 96; Journal Issue: 18 ; May 12, 2006
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; THIN FILMS; PZT; FERROELECTRIC MATERIALS; DOMAIN STRUCTURE; DYNAMICS

Citation Formats

Grigoriev, A., Do, D.-H., Kim, D. M., Eom, C.-B., Adams, B., Dufresne, E. M., Evans, P. G., Experimental Facilities Division, and Univ. of Wisconsin. Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti){sub 3} thin films.. United States: N. p., 2006. Web. doi:10.1103/PhysRevLett.96.187601.
Grigoriev, A., Do, D.-H., Kim, D. M., Eom, C.-B., Adams, B., Dufresne, E. M., Evans, P. G., Experimental Facilities Division, & Univ. of Wisconsin. Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti){sub 3} thin films.. United States. doi:10.1103/PhysRevLett.96.187601.
Grigoriev, A., Do, D.-H., Kim, D. M., Eom, C.-B., Adams, B., Dufresne, E. M., Evans, P. G., Experimental Facilities Division, and Univ. of Wisconsin. Fri . "Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti){sub 3} thin films.". United States. doi:10.1103/PhysRevLett.96.187601.
@article{osti_914791,
title = {Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti){sub 3} thin films.},
author = {Grigoriev, A. and Do, D.-H. and Kim, D. M. and Eom, C.-B. and Adams, B. and Dufresne, E. M. and Evans, P. G. and Experimental Facilities Division and Univ. of Wisconsin},
abstractNote = {No abstract prepared.},
doi = {10.1103/PhysRevLett.96.187601},
journal = {Phys. Rev. Lett.},
number = 18 ; May 12, 2006,
volume = 96,
place = {United States},
year = {Fri May 12 00:00:00 EDT 2006},
month = {Fri May 12 00:00:00 EDT 2006}
}
  • Ferroelectric ternary perovskite thin films of 0.06Pb(Mn{sub 1/3},Nb{sub 2/3})O{sub 3} (PMnN)-0.42PbZrO{sub 3} (PZ)-0.52PbTiO{sub 3} (PT)[0.06PMnN-0.94PZT(45/55)] have been grown on the (001)MgO substrates by radio frequency-magnetron sputtering with quenching processing. The deposition conditions, microstructures, piezoelectric, and ferroelectric properties of the ternary perovskite thin films are described in comparison with the binary compounds of PZ-PT (PZT). The out-plane x-ray diffraction (XRD) measurements for the ternary PMnN-PZT perovskite thin films of 1 to 1-3 {mu}m in film thickness show strong single (001) orientation. The in-plane {phi}-scan XRD curve verified the ternary thin films are single crystals of perovskite structure. Their lattice parameters aremore » almost the same as bulk values and the ternary thin films are almost stress free. The PMnN-PZT thin films show high density without columnar structure. The PZT-based ternary perovskite thin films with the small addition of PMnN, i.e., 6 mole % PMnN, exhibit a strong hard ferroelectric response, i.e., P{sub s}=60 {mu}C/cm{sup 2} and 2E{sub c}=230 kV/cm. Their effective piezoelectric constants are typically e{sub 31,eff}=-7.7 C/m{sup 2}. These values are slightly higher than those of binary perovskite PZT thin 0011fil.« less
  • Ferroelectric Nd-modified lead-zirconate-titanate (PZT) thin films were fabricated as capacitor structures with platinum electrodes using pulsed laser ablation deposition. Single-crystal MgO (100) and thermally oxidized Si (100) were used as substrates. The ablation processes were carried out at room temperature in a pressure of 4{times}10{sup {minus}5}mbar in a vacuum chamber. A pulsed XeCl excimer laser with the wavelength of 308 nm was used for the ablation of both platinum and Pb{sub 0.97}Nd{sub 0.02}(Zr{sub 0.55}Ti{sub 0.45})O{sub 3} targets. For the PZT films with thicknesses between 300 and 600 nm, a laser-beam fluence of 1.0J/cm{sup 2} was used. Amorphous PZT films weremore » postannealed at 675 and 650{degree}C in the cases of MgO and silicon substrates, respectively. The dielectric constant and the loss angle were measured at room temperature as a function of the film thickness. On the MgO substrate the dielectric constant of the films increased from 400 to 600 with the increasing film thickness, while in the films on the silicon substrate the dielectric constant was typically 140. The Curie temperature of the films was about 360{degree}C. The remanent polarization was about 18{mu}C/cm{sup 2} in the films deposited on MgO, but in the films on the silicon substrate the polarization values were much lower. The conductivity of the PZT thin films was studied as a function of temperature and electric field. Low-field resistivities of the order of 10{sup 12}{Omega}cm were measured at room temperature. Macroscopic mechanical stresses in the PZT films were measured by the x-ray diffraction method. The films on the MgO substrate were in a compressive stress, while in the films on the silicon substrate a higher tensile stress was found. The dielectric constant was found to decrease and the coercive field to increase with the increasing mechanical stress. {copyright} {ital 1997 American Institute of Physics.}« less
  • Ferroelectric (Pb{sub 0.97},La{sub 0.03})(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} thin films in different thicknesses were fabricated on Pt/Ti/SiO{sub 2}/Si substrates through a sol-gel process. Film thickness dependence of photoinduced current was investigated under the illumination of ultraviolet light. A theoretical model was developed to describe the thickness-dependent photocurrent. Both the theoretical model and experimental results showed that the photocurrent increases exponentially with the decrease in film thickness. However, photocurrent may drop in the films with the very small thickness of tens of nanometers and below in which the small size effect of ferroelectricity is considered. This model also reveals the relationship betweenmore » the photocurrent and the internal electric field or remnant polarization and predicts a small diffusion current in the opposite direction at very low field or polarization region. These results provide useful guides for the design of ferroelectric film photovoltaic devices.« less
  • A series of Pb(Zr{sub 1-x}Ti{sub x})O{sub 3} multilayer films consisted of Pb(Zr{sub 0.8}Ti{sub 0.2})O{sub 3} and Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} were deposited on Pt/Ti/SiO{sub 2}/Si substrates by using radio frequency magnetron sputtering. All the films comprise six periodicities of Pb(Zr{sub 0.8}Ti{sub 0.2})O{sub 3}/Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} with periodicity thickness of 133 nm, but the layer thicknesses of rhombohedral phase and tetragonal phase in one periodicity are varied. The films with two layer thickness ratio of 1:3 possess enhanced dielectric and ferroelectric properties: dielectric constant {epsilon}{sub r}=328 at 10 kHz, dielectric loss tg{delta}=0.0098, and sharply enhanced remanent polarization P{sub r}=32.6 {mu}C/cm{supmore » 2}. The layer structure and interlayer stress of Pb(Zr{sub 1-x}Ti{sub x})O{sub 3} multilayer films play important roles in the electric enhancement.« less
  • Forming gas annealing causes changes in the remanent polarization (P{sub r}), coercive field (E{sub c}), and leakage current (I) in both PZT [Pb(Zr,Ti)O{sub 3}] and SBT (SrBi{sub 2}Ta{sub 2}O{sub 9}) samples with a variety of top electrode materials (Pt, Au, Ag, Cu, Ni, and In{sub 2}O{sub 3}), and the degree of degradation depends strongly on the top electrode material. These results may be explained by a model that is based on the catalytic activities of the top electrode to dissociate hydrogen molecules into hydrogen atoms, with the latter subsequently migrating into PZT or SBT films to cause oxygen deficiency andmore » its associated property degradation. This model can be expanded to explain the recovery phenomenon resulting from oxygen annealing, which also depends on the catalytic activity of the top electrode to produce atomic oxygen from molecular oxygen. {copyright} {ital 1997 American Institute of Physics.}« less