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Title: Dislocations and Grain Boundaries in Semiconducting Rubrene Single-Crystals

Abstract

Assessing the fundamental limits of the charge carrier mobilities in organic semiconductors is important for the development of organic electronics. Although devices such as organic field effect transistors (OFETs), organic thin film transistors (OTFTs) and organic light emitting diodes (OLEDs) are already used in commercial applications, a complete understanding of the ultimate limitations of performance and stability in these devices is still lacking at this time. Crucial to the determination of electronic properties in organic semiconductors is the ability to grow ultra-pure, fully ordered molecular crystals for measurements of intrinsic charge transport. Likewise, sensitive tools are needed to evaluate crystalline quality. We present a high-resolution X-ray diffraction and X-ray topography analysis of single-crystals of rubrene that are of the quality being reported to show mobilities as high as amorphous silicon. We show that dislocations and grain boundaries, which may limit charge transfer, are prominent in these crystals.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
914389
Report Number(s):
BNL-78957-2007-JA
Journal ID: ISSN 0022-0248; JCRGAE; TRN: US200809%%49
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: J. Cryst. Growth; Journal Volume: 290; Journal Issue: 2
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CHARGE TRANSPORT; DISLOCATIONS; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; LIGHT EMITTING DIODES; MOLECULAR CRYSTALS; ORGANIC SEMICONDUCTORS; CARRIER MOBILITY; AROMATICS; national synchrotron light source

Citation Formats

Chapman,B., Checco, A., Pindak, R., Siegrist, T., and Kloc, C. Dislocations and Grain Boundaries in Semiconducting Rubrene Single-Crystals. United States: N. p., 2006. Web. doi:10.1016/j.jcrysgro.2006.01.056.
Chapman,B., Checco, A., Pindak, R., Siegrist, T., & Kloc, C. Dislocations and Grain Boundaries in Semiconducting Rubrene Single-Crystals. United States. doi:10.1016/j.jcrysgro.2006.01.056.
Chapman,B., Checco, A., Pindak, R., Siegrist, T., and Kloc, C. Sun . "Dislocations and Grain Boundaries in Semiconducting Rubrene Single-Crystals". United States. doi:10.1016/j.jcrysgro.2006.01.056.
@article{osti_914389,
title = {Dislocations and Grain Boundaries in Semiconducting Rubrene Single-Crystals},
author = {Chapman,B. and Checco, A. and Pindak, R. and Siegrist, T. and Kloc, C.},
abstractNote = {Assessing the fundamental limits of the charge carrier mobilities in organic semiconductors is important for the development of organic electronics. Although devices such as organic field effect transistors (OFETs), organic thin film transistors (OTFTs) and organic light emitting diodes (OLEDs) are already used in commercial applications, a complete understanding of the ultimate limitations of performance and stability in these devices is still lacking at this time. Crucial to the determination of electronic properties in organic semiconductors is the ability to grow ultra-pure, fully ordered molecular crystals for measurements of intrinsic charge transport. Likewise, sensitive tools are needed to evaluate crystalline quality. We present a high-resolution X-ray diffraction and X-ray topography analysis of single-crystals of rubrene that are of the quality being reported to show mobilities as high as amorphous silicon. We show that dislocations and grain boundaries, which may limit charge transfer, are prominent in these crystals.},
doi = {10.1016/j.jcrysgro.2006.01.056},
journal = {J. Cryst. Growth},
number = 2,
volume = 290,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}