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Title: Temperature Dependence of the EUV Responsivity of Silicon Photodiodes

Abstract

Responsivity of silicon photodiodes was measured from -100 C to +50 C in the 3 to 250 nm wavelength range using synchrotron and laboratory radiation sources. Two types of silicon photodiodes were studied, the AXUV series having a thin nitrided silicon dioxide surface layer and the SXUV series having a thin metal silicide surface layer. Depending on the wavelength, the responsivity increases with temperature with the rates 0.013%/C to 0.053%/C for the AXUV photodiode and 0.020%/C to 0.084%/C for the SXUV photodiode. The increase in responsivity is consistent with the decrease in the silicon bandgap energy which causes a decrease in the pair creation energy. These results are particularly important for dose measurement in extreme ultraviolet (EUV) lithography steppers and sources since the detector temperature often increases because of the high EUV intensities involved.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
914255
Report Number(s):
BNL-78823-2007-JA
Journal ID: ISSN 0018-9383; IETDAI; TRN: US0802841
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Trans. Elect. Device; Journal Volume: 53
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; PHOTODIODES; RADIATION SOURCES; SILICIDES; SILICON; SYNCHROTRONS; TEMPERATURE DEPENDENCE; WAVELENGTHS; national synchrotron light source

Citation Formats

Kjornrattanawanich,B., Korde, R., Boyer, C., Holland, G., and Seely, J. Temperature Dependence of the EUV Responsivity of Silicon Photodiodes. United States: N. p., 2006. Web. doi:10.1109/TED.2005.862500.
Kjornrattanawanich,B., Korde, R., Boyer, C., Holland, G., & Seely, J. Temperature Dependence of the EUV Responsivity of Silicon Photodiodes. United States. doi:10.1109/TED.2005.862500.
Kjornrattanawanich,B., Korde, R., Boyer, C., Holland, G., and Seely, J. Sun . "Temperature Dependence of the EUV Responsivity of Silicon Photodiodes". United States. doi:10.1109/TED.2005.862500.
@article{osti_914255,
title = {Temperature Dependence of the EUV Responsivity of Silicon Photodiodes},
author = {Kjornrattanawanich,B. and Korde, R. and Boyer, C. and Holland, G. and Seely, J.},
abstractNote = {Responsivity of silicon photodiodes was measured from -100 C to +50 C in the 3 to 250 nm wavelength range using synchrotron and laboratory radiation sources. Two types of silicon photodiodes were studied, the AXUV series having a thin nitrided silicon dioxide surface layer and the SXUV series having a thin metal silicide surface layer. Depending on the wavelength, the responsivity increases with temperature with the rates 0.013%/C to 0.053%/C for the AXUV photodiode and 0.020%/C to 0.084%/C for the SXUV photodiode. The increase in responsivity is consistent with the decrease in the silicon bandgap energy which causes a decrease in the pair creation energy. These results are particularly important for dose measurement in extreme ultraviolet (EUV) lithography steppers and sources since the detector temperature often increases because of the high EUV intensities involved.},
doi = {10.1109/TED.2005.862500},
journal = {IEEE Trans. Elect. Device},
number = ,
volume = 53,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}
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