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Title: Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area

Abstract

Ni/4H-SiC Schottky photodiodes of 5 mm x 5 mm area have been fabricated and characterized. The photodiodes show less than 0.1 pA dark current at -4 V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400 nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14 electrons/photon at 120 nmto30 electrons/photon at 3 nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9 eV.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
914254
Report Number(s):
BNL-78822-2007-JA
Journal ID: ISSN 0146-9592; OPLEDP; TRN: US200809%%14
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Opt. Lett.; Journal Volume: 31
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; PHOTODIODES; SCHOTTKY BARRIER DIODES; FABRICATION; QUANTUM EFFICIENCY; NICKEL; SILICON CARBIDES; HYDRATES; EXTREME ULTRAVIOLET RADIATION; DETECTION; national synchrotron light source

Citation Formats

Hu,J., Xin, X., Zhao, J., Yan, F., Guan, B., Seely, J., and Kjornrattanawanich, B. Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area. United States: N. p., 2006. Web. doi:10.1364/OL.31.001591.
Hu,J., Xin, X., Zhao, J., Yan, F., Guan, B., Seely, J., & Kjornrattanawanich, B. Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area. United States. doi:10.1364/OL.31.001591.
Hu,J., Xin, X., Zhao, J., Yan, F., Guan, B., Seely, J., and Kjornrattanawanich, B. Sun . "Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area". United States. doi:10.1364/OL.31.001591.
@article{osti_914254,
title = {Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area},
author = {Hu,J. and Xin, X. and Zhao, J. and Yan, F. and Guan, B. and Seely, J. and Kjornrattanawanich, B.},
abstractNote = {Ni/4H-SiC Schottky photodiodes of 5 mm x 5 mm area have been fabricated and characterized. The photodiodes show less than 0.1 pA dark current at -4 V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400 nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14 electrons/photon at 120 nmto30 electrons/photon at 3 nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9 eV.},
doi = {10.1364/OL.31.001591},
journal = {Opt. Lett.},
number = ,
volume = 31,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}