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Title: Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area

Abstract

Ni/4H-SiC Schottky photodiodes of 5 mm x 5 mm area have been fabricated and characterized. The photodiodes show less than 0.1 pA dark current at -4 V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400 nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14 electrons/photon at 120 nmto30 electrons/photon at 3 nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9 eV.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
914254
Report Number(s):
BNL-78822-2007-JA
Journal ID: ISSN 0146-9592; OPLEDP; TRN: US200809%%14
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Opt. Lett.; Journal Volume: 31
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; PHOTODIODES; SCHOTTKY BARRIER DIODES; FABRICATION; QUANTUM EFFICIENCY; NICKEL; SILICON CARBIDES; HYDRATES; EXTREME ULTRAVIOLET RADIATION; DETECTION; national synchrotron light source

Citation Formats

Hu,J., Xin, X., Zhao, J., Yan, F., Guan, B., Seely, J., and Kjornrattanawanich, B.. Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area. United States: N. p., 2006. Web. doi:10.1364/OL.31.001591.
Hu,J., Xin, X., Zhao, J., Yan, F., Guan, B., Seely, J., & Kjornrattanawanich, B.. Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area. United States. doi:10.1364/OL.31.001591.
Hu,J., Xin, X., Zhao, J., Yan, F., Guan, B., Seely, J., and Kjornrattanawanich, B.. Sun . "Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area". United States. doi:10.1364/OL.31.001591.
@article{osti_914254,
title = {Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area},
author = {Hu,J. and Xin, X. and Zhao, J. and Yan, F. and Guan, B. and Seely, J. and Kjornrattanawanich, B.},
abstractNote = {Ni/4H-SiC Schottky photodiodes of 5 mm x 5 mm area have been fabricated and characterized. The photodiodes show less than 0.1 pA dark current at -4 V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400 nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14 electrons/photon at 120 nmto30 electrons/photon at 3 nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9 eV.},
doi = {10.1364/OL.31.001591},
journal = {Opt. Lett.},
number = ,
volume = 31,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}
  • We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized usingmore » a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection.« less
  • UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (In{sub x}Ga{sub 1–x}){sub 2}O{sub 3} thin film with a monotonic lateral variation of 0.0035 < x < 0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified.
  • Planar geometry Schottky barrier photodiodes designed for visible-blind ultraviolet detection have been fabricated. They are based on ZnMgBeSe alloys grown by molecular-beam epitaxy. High crystalline quality is achieved, which leads to a high responsivity (0.17 A/W at 375 nm) and a sharp cutoff of more than three orders of magnitude. As attested by the linear variation of the photocurrent with the optical excitation, there is no internal gain mechanism. A detectivity of 2{times}10{sup 10}mHz{sup 1/2}W{sup {minus}1} is obtained showing that low-noise devices with high sensitivity have been fabricated. {copyright} 2001 American Institute of Physics.
  • Schottky diodes on n-type 4H-SiC epitaxial layers have been fabricated for low-energy x-ray detection. The detectors were highly sensitive to soft x-rays and showed improved response compared to the commercial SiC UV photodiodes. Current-voltage characteristics at 475 K showed low leakage current revealing the possibility of high temperature operation. The high quality of the epi-layer was confirmed by x-ray diffraction and chemical etching. Thermally stimulated current measurements performed at 94-550 K revealed low density of deep levels which may cause charge trapping. No charge trapping on detectors' responsivity in the low x-ray energy was found.