Mechanism for Increasing Dopant Incorporation in Semiconductors Via Doped Nanostructures
A long-standing problem for ZnSe (and related alloys) has been to obtain good p-type doping. Recent work has given about an order-of-magnitude improvement in such doping by use of Te as a 'codopant' to facilitate the introduction of an acceptor dopant (N), since it is known that p-ZnTe can be obtained quite readily; the Te was introduced in submonolayer quantities via planar ({delta}) doping during molecular beam epitaxy. Here, we examine the mechanism of this improved doping. We show that it resides in the formation of ZnTe-rich nanoislands, with the N embedded in these. This result is obtained by studies involving transmission electron microscopy, high-resolution x-ray diffraction, secondary-ion mass spectroscopy, and temperature quenching of photoluminescence. We note that these nanoislands appear quite unique, in providing doping of semiconductors, and thus are of great interest of their own.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 914224
- Report Number(s):
- BNL-78792-2007-JA; PRBMDO; TRN: US200809%%102
- Journal Information:
- Phys. Rev. B, Vol. 73; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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