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Title: Crystal Growth and Characterization of Thick GaN Layers Grown by Oxide Vapor Transport Technique

Abstract

Single-crystal GaN layers of 20-40 {micro}m thickness were grown in an oxide transport process using a mixture of commercially available Ga{sub 2}O{sub 3} powder and graphite powder as precursors. Ammonia was used as the source of nitrogen in these experiments. A two-flow design was used to perform these experiments, in which, the nitrogen carrier gas was passed through the powder to transport the resulting gallium suboxide (Ga{sub 2}O) towards the seed crystal. The GaN layers thus obtained from the processes were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), and reciprocal space mappings. XRD patterns showed that the grown GaN layers are single crystals oriented along c-direction with wurtzite structure.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
914216
Report Number(s):
BNL-78784-2007-JA
Journal ID: ISSN 0022-0248; JCRGAE; TRN: US200804%%340
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: J. Cryst. Growth; Journal Volume: 289; Journal Issue: 1
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; GALLIUM OXIDES; AMMONIA; CRYSTAL GROWTH; MONOCRYSTALS; CRYSTAL STRUCTURE; national synchrotron light source

Citation Formats

Konkapaka,P., Raghothamachar, B., Dudley, M., Makarov, Y., and Spencer, M.. Crystal Growth and Characterization of Thick GaN Layers Grown by Oxide Vapor Transport Technique. United States: N. p., 2006. Web. doi:10.1016/j.jcrysgro.2005.11.005.
Konkapaka,P., Raghothamachar, B., Dudley, M., Makarov, Y., & Spencer, M.. Crystal Growth and Characterization of Thick GaN Layers Grown by Oxide Vapor Transport Technique. United States. doi:10.1016/j.jcrysgro.2005.11.005.
Konkapaka,P., Raghothamachar, B., Dudley, M., Makarov, Y., and Spencer, M.. Sun . "Crystal Growth and Characterization of Thick GaN Layers Grown by Oxide Vapor Transport Technique". United States. doi:10.1016/j.jcrysgro.2005.11.005.
@article{osti_914216,
title = {Crystal Growth and Characterization of Thick GaN Layers Grown by Oxide Vapor Transport Technique},
author = {Konkapaka,P. and Raghothamachar, B. and Dudley, M. and Makarov, Y. and Spencer, M.},
abstractNote = {Single-crystal GaN layers of 20-40 {micro}m thickness were grown in an oxide transport process using a mixture of commercially available Ga{sub 2}O{sub 3} powder and graphite powder as precursors. Ammonia was used as the source of nitrogen in these experiments. A two-flow design was used to perform these experiments, in which, the nitrogen carrier gas was passed through the powder to transport the resulting gallium suboxide (Ga{sub 2}O) towards the seed crystal. The GaN layers thus obtained from the processes were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), and reciprocal space mappings. XRD patterns showed that the grown GaN layers are single crystals oriented along c-direction with wurtzite structure.},
doi = {10.1016/j.jcrysgro.2005.11.005},
journal = {J. Cryst. Growth},
number = 1,
volume = 289,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}