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Title: Photoinduced Changes in the Local Structure of a-GeSe2 by in-situ EXAFS

Abstract

In-situ extended x-ray absorption fine structure (EXAFS) analysis at the Ge and Se k-edges has been used to study the changes in the local atomic structure induced by bandgap and super bandgap illumination in normally and obliquely deposited a-GeSe2 films. The results obtained before, during and after illumination show that both the transient and metastable changes are induced by illumination, the magnitude depending on the photon energy and also the deposition conditions. A contraction is observed at both the Se and the Ge nearest neighbor distances.

Authors:
; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
914190
Report Number(s):
BNL-78758-2007-JA
Journal ID: ISSN 0031-9090; PCGLA6; TRN: US0801601
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Phys. Chem. Glasses; Journal Volume: 47; Journal Issue: 2
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; ABSORPTION; CONTRACTION; DEPOSITION; FINE STRUCTURE; PHOTONS; TRANSIENTS; NSLS; national synchrotron light source

Citation Formats

Ganjoo,A., Chen, G., and Jain, H. Photoinduced Changes in the Local Structure of a-GeSe2 by in-situ EXAFS. United States: N. p., 2006. Web.
Ganjoo,A., Chen, G., & Jain, H. Photoinduced Changes in the Local Structure of a-GeSe2 by in-situ EXAFS. United States.
Ganjoo,A., Chen, G., and Jain, H. Sun . "Photoinduced Changes in the Local Structure of a-GeSe2 by in-situ EXAFS". United States. doi:.
@article{osti_914190,
title = {Photoinduced Changes in the Local Structure of a-GeSe2 by in-situ EXAFS},
author = {Ganjoo,A. and Chen, G. and Jain, H.},
abstractNote = {In-situ extended x-ray absorption fine structure (EXAFS) analysis at the Ge and Se k-edges has been used to study the changes in the local atomic structure induced by bandgap and super bandgap illumination in normally and obliquely deposited a-GeSe2 films. The results obtained before, during and after illumination show that both the transient and metastable changes are induced by illumination, the magnitude depending on the photon energy and also the deposition conditions. A contraction is observed at both the Se and the Ge nearest neighbor distances.},
doi = {},
journal = {Phys. Chem. Glasses},
number = 2,
volume = 47,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}