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Title: Comparison of Ultrathin SiO2/Si(100) and SiO2/Si(111) Interfaces from Soft X-ray Photoelectron Spectroscopy

Abstract

The limitations of soft x-ray photoelectron spectroscopy (SXPS) for determining structural information of the SiO{sub 2}/Si interface for device-grade ultrathin ({approx}6-22 Angstroms) films of SiO{sub 2} prepared from crystalline silicon by remote plasma assisted oxidation are explored. The main focus of this article is the limitation of data analysis and sensitivity to structural parameters. In particular, annealing data shows a significant decrease in the integrated density of suboxide bonding arrangements as determined from analysis of SXPS data. These decreases and changes are interpreted as evidence for reorganization of specific interface bonding arrangements due to the annealing process. Moreover, these results suggest that sample preparation and processing history are both critical for defining the nature of the SiO{sub 2}/Si interface, and therefore its electrical properties. Quantitative estimates of the interface state densities are derived from SXPS data revealing {approx}2 monolayers (ML) of suboxide as prepared and {approx}1.5 ML of suboxide after rapid thermal annealing at 900 degrees C for both Si(100) and Si(111) substrates. Comparison of the individual suboxide bonding state densities indicate for both Si substrate crystallographic orientations that annealing causes a self-organization of the suboxide consistent with bond constraint theory.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
913954
Report Number(s):
BNL-78522-2007-JA
TRN: US200804%%302
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
J. Vac. Sci. Technol., B
Additional Journal Information:
Journal Volume: 24
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; SILICON OXIDES; INTERFACES; SOFT X RADIATION; ANNEALING; ELECTRICAL PROPERTIES; SAMPLE PREPARATION; X-RAY PHOTOELECTRON SPECTROSCOPY; national synchrotron light source

Citation Formats

Ulrich, M, Rowe, J, Keister, J, Niimi, H, Fleming, L, and Lucovsky, G. Comparison of Ultrathin SiO2/Si(100) and SiO2/Si(111) Interfaces from Soft X-ray Photoelectron Spectroscopy. United States: N. p., 2006. Web. doi:10.1116/1.2218865.
Ulrich, M, Rowe, J, Keister, J, Niimi, H, Fleming, L, & Lucovsky, G. Comparison of Ultrathin SiO2/Si(100) and SiO2/Si(111) Interfaces from Soft X-ray Photoelectron Spectroscopy. United States. doi:10.1116/1.2218865.
Ulrich, M, Rowe, J, Keister, J, Niimi, H, Fleming, L, and Lucovsky, G. Sun . "Comparison of Ultrathin SiO2/Si(100) and SiO2/Si(111) Interfaces from Soft X-ray Photoelectron Spectroscopy". United States. doi:10.1116/1.2218865.
@article{osti_913954,
title = {Comparison of Ultrathin SiO2/Si(100) and SiO2/Si(111) Interfaces from Soft X-ray Photoelectron Spectroscopy},
author = {Ulrich, M and Rowe, J and Keister, J and Niimi, H and Fleming, L and Lucovsky, G},
abstractNote = {The limitations of soft x-ray photoelectron spectroscopy (SXPS) for determining structural information of the SiO{sub 2}/Si interface for device-grade ultrathin ({approx}6-22 Angstroms) films of SiO{sub 2} prepared from crystalline silicon by remote plasma assisted oxidation are explored. The main focus of this article is the limitation of data analysis and sensitivity to structural parameters. In particular, annealing data shows a significant decrease in the integrated density of suboxide bonding arrangements as determined from analysis of SXPS data. These decreases and changes are interpreted as evidence for reorganization of specific interface bonding arrangements due to the annealing process. Moreover, these results suggest that sample preparation and processing history are both critical for defining the nature of the SiO{sub 2}/Si interface, and therefore its electrical properties. Quantitative estimates of the interface state densities are derived from SXPS data revealing {approx}2 monolayers (ML) of suboxide as prepared and {approx}1.5 ML of suboxide after rapid thermal annealing at 900 degrees C for both Si(100) and Si(111) substrates. Comparison of the individual suboxide bonding state densities indicate for both Si substrate crystallographic orientations that annealing causes a self-organization of the suboxide consistent with bond constraint theory.},
doi = {10.1116/1.2218865},
journal = {J. Vac. Sci. Technol., B},
number = ,
volume = 24,
place = {United States},
year = {2006},
month = {1}
}