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Title: Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage

Abstract

Metal-containing tetrahedral amorphous carbon films wereproduced by dual filtered cathodic vacuum arc plasma sources operatedinsequentially pulsed mode. Negatively pulsed bias was applied to thesubstrate when carbon plasma was generated, whereas it was absentwhen themolybdenum plasma was presented. Film thickness was measured afterdeposition by profilometry. Glass slides with silver padswere used assubstrates for the measurement of the sheet resistance. Themicrostructure and composition of the films were characterizedbyRamanspectroscopy and Rutherford backscattering, respectively. It was foundthat the electrical resistivity decreases with an increaseof the Mocontent, which can be ascribed to an increase of the sp2 content and anincrease of the sp2 cluster size.

Authors:
; ; ; ;
Publication Date:
Research Org.:
COLLABORATION - MaiU./Thailand
OSTI Identifier:
913157
Report Number(s):
LBNL-61581-JArt
R&D Project: Z2PANC; BnR: 600301010; TRN: US200802%%559
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nuclear Instruments and Methods of Physics ResearchB; Journal Volume: 259; Related Information: Journal Publication Date: 2007
Country of Publication:
United States
Language:
English
Subject:
70; 36; BACKSCATTERING; CARBON; DEPOSITION; ELECTRIC CONDUCTIVITY; GLASS; MICROSTRUCTURE; MOLYBDENUM; PLASMA; RAMAN SPECTROSCOPY; SILVER; SUBSTRATES; THICKNESS; cathodic arcs diamond-like carbon films molybdenum

Citation Formats

Pasaja, Nitisak, Sansongsiri, Sakon, Intasiri, Sawate, Vilaithong, Thiraphat, and Anders, Andre. Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage. United States: N. p., 2007. Web.
Pasaja, Nitisak, Sansongsiri, Sakon, Intasiri, Sawate, Vilaithong, Thiraphat, & Anders, Andre. Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage. United States.
Pasaja, Nitisak, Sansongsiri, Sakon, Intasiri, Sawate, Vilaithong, Thiraphat, and Anders, Andre. Wed . "Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage". United States. doi:. https://www.osti.gov/servlets/purl/913157.
@article{osti_913157,
title = {Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage},
author = {Pasaja, Nitisak and Sansongsiri, Sakon and Intasiri, Sawate and Vilaithong, Thiraphat and Anders, Andre},
abstractNote = {Metal-containing tetrahedral amorphous carbon films wereproduced by dual filtered cathodic vacuum arc plasma sources operatedinsequentially pulsed mode. Negatively pulsed bias was applied to thesubstrate when carbon plasma was generated, whereas it was absentwhen themolybdenum plasma was presented. Film thickness was measured afterdeposition by profilometry. Glass slides with silver padswere used assubstrates for the measurement of the sheet resistance. Themicrostructure and composition of the films were characterizedbyRamanspectroscopy and Rutherford backscattering, respectively. It was foundthat the electrical resistivity decreases with an increaseof the Mocontent, which can be ascribed to an increase of the sp2 content and anincrease of the sp2 cluster size.},
doi = {},
journal = {Nuclear Instruments and Methods of Physics ResearchB},
number = ,
volume = 259,
place = {United States},
year = {Wed Jan 24 00:00:00 EST 2007},
month = {Wed Jan 24 00:00:00 EST 2007}
}
  • Metal-containing tetrahedral amorphous carbon films were produced by dual filtered cathodic vacuum arc (FCVA) plasma sources operated in sequential pulsed mode. A negatively pulsed bias was applied to the substrate only when carbon plasma was generated. Films thickness was measured after deposition by profilometry. Glass slides with silver pads were used as substrate for the of the measurement sheet resistance. The microstructure and composition of the films were characterized by Raman spectroscopy and Rutherford backscattering, respectively. It found that the electrical resistivity decreases with an increase of the Mo content, which can be ascribed to an increase of sp2 contentmore » and an increase of the sp2 cluster size.« less
  • The graphite macroparticle filtering efficiency of three different magnetic filter designs (straight duct, toroidal duct, and 90[degree] free-standing solenoid) used in the filtered cathodic vacuum arc deposition of tetrahedral amorphous carbon (ta-C) films was investigated. The particle contents in the coatings were measured using scanning electron microscopy (SEM) technique. In addition, during the ta-C deposition, long time exposure photographs were taken to see the graphite macroparticle trajectories and thus to qualitatively evaluate the filtering performance of different magnetic filters. The particle density measurements from the SEM images show that the filtering efficiency of the 90[degree] free-standing solenoid design is 13more » times better than the filtering efficiency of the straight duct design. However, the toroidal duct design had only 3 times higher filtering efficiency compared to the straight duct design. [copyright] [ital 1999 American Vacuum Society.]« less
  • Amorphous silicon-carbon alloy films have been successfully deposited by filtered cathodic vacuum arc technique. The structural and mechanical properties of the films were investigated by using x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, surface profiler and nano-indenter. The silicon content in the films determined by XPS measurement varies from 2.4 to 48 at.%. Both XPS and Raman spectroscopy show the existence of silicon carbide clusters in the films containing intermediate concentration of silicon. The silicon atoms predominantly substitute the carbon atom into the carbon clusters at low silicon concentration, and form amorphous silicon carbide clusters or amorphous silicon clusters at highmore » silicon concentration. The hardness of the films varies from 60 to 22 GPa while the stress reduces from 8.0 to 2.1 GPa.« less
  • Ta-C films have been deposited using FCVA technique. The hardness and Young`s modulus of the films on both silicon and sapphire substrates are determined by an ultra low load depth sensing nanoindenter to examine their dependence on the carbon ion energy. An optimum ion energy around 80 to 90 eV has been found, which coincides with the energy at which the sp{sup 3} content and film density reach maximum values. At this ion energy, the hardness, modulus and critical load of a 60 nm film on sapphire exhibit maximum values of 60 GPa, 580 GPa and 7 mN, respectively, whilemore » the frictional coefficient shows a minimum of 0.16.« less
  • Hydrogen-free amorphous carbon (a-C) and carbon nitride (a-C:N) films were deposited using the pulsed cathodic arc discharge at different argon and nitrogen pressures. The surface and mechanical properties of these films were found to strongly depend on the gas pressure. The tetrahedral amorphous carbon and hard a-C:N films with smooth surfaces (rms roughness: 0.15 nm) were prepared at lower gas pressures (<6x10{sup -2} Pa). Incorporation of an increasing amount of nitrogen in a-C:N films caused a decrease in film hardness. All the films were covered with the thin (0.3-2 nm) graphite-like surface layers. The film hardness was correlated to themore » soft surface layer thickness, and the films with thinner surface layers exhibit higher hardness. The mean energies of pulsed plasma beams were measured as the functions of argon and nitrogen pressures. The mean energies of plasma beams decrease in an exponential fashion with increasing gas pressure due to the carbon ion collisions with the neutral gas species. The effects of mean energies of deposited species on the film deposition were explained in terms of the thermal spike migration of surface atoms. The formation of graphite-like surface layers is associated with the low-energy deposition process. The low-energy (<1-3 eV) species diffusing on film surface lead to the formation of graphite-like a-C films with plenty of grains. The higher-energy (>10 eV) species may produce the strong thermal spike at film surface, and contribute to the formation of sp{sup 3} bonded structure at a sp{sup 3} bonded matrix.« less