N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
Patent
·
OSTI ID:912843
- Downers Grove, IL
- late of Naperville, IL
- Bolingbrook, IL
- Plainfield, IL
An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10.sup.19 atoms/cm.sup.3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- The University of Chicago (Chicago, IL)
- Patent Number(s):
- 6,793,849
- Application Number:
- 10/398,427
- OSTI ID:
- 912843
- Country of Publication:
- United States
- Language:
- English
Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas
|
journal | November 1997 |
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