Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics
Abstract
The principal goal in the field of high-Tc ferromagnetic semiconductors is the synthesis, characterization and utilization of semiconductors which exhibit substantial carrier spin polarization at and above room temperature. Such materials are of critical importance in the emerging field of semiconductor spintronics. The interaction leading to carrier spin polarization, exchange coupling between the dopant spins and the valence or conduction band, is known to be sufficiently weak in conventional semiconductors, such as GaAs and Si, that magnetic ordering above cryogenic temperatures is essentially impossible. Since the provocative theoretical predictions of Tc above ambient in p-Mn:ZnO and p-Mn:GaN (T. Dietl et al., Science 287 1019 (2000)), and the observation of room-temperature ferromagnetism in Co:TiO2 anatase (Y. Matsumoto et al., Science 291 854 (2001)), there has been a flurry of work in oxides and nitrides doped with transition metals with unpaired d electrons. It has even been claimed that room-temperature ferromagnetism can be obtained in certain d0 transition metals oxides without a dopant. In this Report, the field of transition metal doped oxides and nitrides is critically reviewed and assessed from a materials science perspective. Since much of the field centers around thin film growth, this Report focuses on films prepared notmore »
- Authors:
- Publication Date:
- Research Org.:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 910008
- Report Number(s):
- PNNL-SA-48337
KC0201050
- DOE Contract Number:
- AC05-76RL01830
- Resource Type:
- Journal Article
- Journal Name:
- Surface Science Reports, 61(8):345-381
- Additional Journal Information:
- Journal Name: Surface Science Reports, 61(8):345-381
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Chambers, Scott A. Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics. United States: N. p., 2006.
Web. doi:10.1016/j.surfrep.2006.05.001.
Chambers, Scott A. Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics. United States. https://doi.org/10.1016/j.surfrep.2006.05.001
Chambers, Scott A. 2006.
"Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics". United States. https://doi.org/10.1016/j.surfrep.2006.05.001.
@article{osti_910008,
title = {Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics},
author = {Chambers, Scott A},
abstractNote = {The principal goal in the field of high-Tc ferromagnetic semiconductors is the synthesis, characterization and utilization of semiconductors which exhibit substantial carrier spin polarization at and above room temperature. Such materials are of critical importance in the emerging field of semiconductor spintronics. The interaction leading to carrier spin polarization, exchange coupling between the dopant spins and the valence or conduction band, is known to be sufficiently weak in conventional semiconductors, such as GaAs and Si, that magnetic ordering above cryogenic temperatures is essentially impossible. Since the provocative theoretical predictions of Tc above ambient in p-Mn:ZnO and p-Mn:GaN (T. Dietl et al., Science 287 1019 (2000)), and the observation of room-temperature ferromagnetism in Co:TiO2 anatase (Y. Matsumoto et al., Science 291 854 (2001)), there has been a flurry of work in oxides and nitrides doped with transition metals with unpaired d electrons. It has even been claimed that room-temperature ferromagnetism can be obtained in certain d0 transition metals oxides without a dopant. In this Report, the field of transition metal doped oxides and nitrides is critically reviewed and assessed from a materials science perspective. Since much of the field centers around thin film growth, this Report focuses on films prepared not only by conventional vacuum deposition methods, but also by spin coating colloidal nanoparticles.},
doi = {10.1016/j.surfrep.2006.05.001},
url = {https://www.osti.gov/biblio/910008},
journal = {Surface Science Reports, 61(8):345-381},
number = ,
volume = ,
place = {United States},
year = {Sun Oct 01 00:00:00 EDT 2006},
month = {Sun Oct 01 00:00:00 EDT 2006}
}