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Title: THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.

Abstract

In order to obtain reliable quantitative information on the electrostatic field associated with reverse-biased p-n junctions and on the distribution of dopants, the physics of the so-called ''dead layer'' and the influence of charged oxide layers are of paramount importance. To this purpose, experimental observations near the edge of a TEM sample can be useful. In these conditions, however, phase computations required to interpret the experimental results are very challenging as the problem is intrinsically three-dimensional. In order to cope with this problem, a mixed analytical-numerical approach is presented and discussed.

Authors:
; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
909960
Report Number(s):
BNL-77930-2007-CP
R&D Project: 05247; KC0201010; TRN: US200723%%77
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Conference
Resource Relation:
Conference: PROCEEDINGS OF THE MICROSCOPY OF SEMICONDUCTING MATERIALS; UNIVERSITY OF CAMBRIDGE; 20070402 through 20070405
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; P-N JUNCTIONS; MATHEMATICAL MODELS; THREE-DIMENSIONAL CALCULATIONS; ELECTROSTATICS

Citation Formats

UBALDI,F., POZZI, G., FAZZINI, P.F., and BELEGGIA, M. THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.. United States: N. p., 2007. Web.
UBALDI,F., POZZI, G., FAZZINI, P.F., & BELEGGIA, M. THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.. United States.
UBALDI,F., POZZI, G., FAZZINI, P.F., and BELEGGIA, M. Mon . "THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.". United States. doi:. https://www.osti.gov/servlets/purl/909960.
@article{osti_909960,
title = {THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.},
author = {UBALDI,F. and POZZI, G. and FAZZINI, P.F. and BELEGGIA, M.},
abstractNote = {In order to obtain reliable quantitative information on the electrostatic field associated with reverse-biased p-n junctions and on the distribution of dopants, the physics of the so-called ''dead layer'' and the influence of charged oxide layers are of paramount importance. To this purpose, experimental observations near the edge of a TEM sample can be useful. In these conditions, however, phase computations required to interpret the experimental results are very challenging as the problem is intrinsically three-dimensional. In order to cope with this problem, a mixed analytical-numerical approach is presented and discussed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Apr 02 00:00:00 EDT 2007},
month = {Mon Apr 02 00:00:00 EDT 2007}
}

Conference:
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