THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.
Abstract
In order to obtain reliable quantitative information on the electrostatic field associated with reverse-biased p-n junctions and on the distribution of dopants, the physics of the so-called ''dead layer'' and the influence of charged oxide layers are of paramount importance. To this purpose, experimental observations near the edge of a TEM sample can be useful. In these conditions, however, phase computations required to interpret the experimental results are very challenging as the problem is intrinsically three-dimensional. In order to cope with this problem, a mixed analytical-numerical approach is presented and discussed.
- Authors:
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- Doe - Office Of Science
- OSTI Identifier:
- 909960
- Report Number(s):
- BNL-77930-2007-CP
R&D Project: 05247; KC0201010; TRN: US200723%%77
- DOE Contract Number:
- DE-AC02-98CH10886
- Resource Type:
- Conference
- Resource Relation:
- Conference: PROCEEDINGS OF THE MICROSCOPY OF SEMICONDUCTING MATERIALS; UNIVERSITY OF CAMBRIDGE; 20070402 through 20070405
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; P-N JUNCTIONS; MATHEMATICAL MODELS; THREE-DIMENSIONAL CALCULATIONS; ELECTROSTATICS
Citation Formats
UBALDI, F, POZZI, G, FAZZINI, P F, and BELEGGIA, M. THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.. United States: N. p., 2007.
Web.
UBALDI, F, POZZI, G, FAZZINI, P F, & BELEGGIA, M. THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.. United States.
UBALDI, F, POZZI, G, FAZZINI, P F, and BELEGGIA, M. 2007.
"THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.". United States. https://www.osti.gov/servlets/purl/909960.
@article{osti_909960,
title = {THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.},
author = {UBALDI, F and POZZI, G and FAZZINI, P F and BELEGGIA, M},
abstractNote = {In order to obtain reliable quantitative information on the electrostatic field associated with reverse-biased p-n junctions and on the distribution of dopants, the physics of the so-called ''dead layer'' and the influence of charged oxide layers are of paramount importance. To this purpose, experimental observations near the edge of a TEM sample can be useful. In these conditions, however, phase computations required to interpret the experimental results are very challenging as the problem is intrinsically three-dimensional. In order to cope with this problem, a mixed analytical-numerical approach is presented and discussed.},
doi = {},
url = {https://www.osti.gov/biblio/909960},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Apr 02 00:00:00 EDT 2007},
month = {Mon Apr 02 00:00:00 EDT 2007}
}
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