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Title: In-situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs

Abstract

Preparation of clean and smooth surfaces of InAs(100) by hydrogen molecular cleaning (HMC) along with in-situ studies of the nanoscale oxidation of pristine surfaces is studied. Removal of native oxides has been verified in-depth by in-situ nuclear reaction analysis(NRA) using the 16O(d,p)17O reaction and XPS. Further, ion channeling studies have been performed to verify atomically smooth surfaces after post-cleaning. Stability and kinetic boundaries of the cleaned InAs(100) surfaces against oxidation have also been experimentally derived and studied by NRA. These results are important not only to prepare clean surfaces of InAs, but also to understand fundamentals of oxide/III-V semiconductor interfaces.

Authors:
; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
909456
Report Number(s):
PNNL-SA-54951
Journal ID: ISSN 0003-6951; APPLAB; 18895; KP1704020; TRN: US200722%%1263
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters, 90(20); Journal Volume: 90; Journal Issue: 20
Country of Publication:
United States
Language:
English
Subject:
08 HYDROGEN; CLEANING; HYDROGEN; ION CHANNELING; KINETICS; MONOCRYSTALS; NUCLEAR REACTION ANALYSIS; NUCLEAR REACTIONS; OXIDATION; OXIDES; REMOVAL; SCATTERING; STABILITY; X-RAY PHOTOELECTRON SPECTROSCOPY; Oxide films; RBS; Interfaces; Ion channeling; Environmental Molecular Sciences Laboratory

Citation Formats

Chang, Chia-Lin, Shutthanandan, V., Singhal, Subhash C., and Ramanathan, Shriram. In-situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs. United States: N. p., 2007. Web. doi:10.1063/1.2740200.
Chang, Chia-Lin, Shutthanandan, V., Singhal, Subhash C., & Ramanathan, Shriram. In-situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs. United States. doi:10.1063/1.2740200.
Chang, Chia-Lin, Shutthanandan, V., Singhal, Subhash C., and Ramanathan, Shriram. Mon . "In-situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs". United States. doi:10.1063/1.2740200.
@article{osti_909456,
title = {In-situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs},
author = {Chang, Chia-Lin and Shutthanandan, V. and Singhal, Subhash C. and Ramanathan, Shriram},
abstractNote = {Preparation of clean and smooth surfaces of InAs(100) by hydrogen molecular cleaning (HMC) along with in-situ studies of the nanoscale oxidation of pristine surfaces is studied. Removal of native oxides has been verified in-depth by in-situ nuclear reaction analysis(NRA) using the 16O(d,p)17O reaction and XPS. Further, ion channeling studies have been performed to verify atomically smooth surfaces after post-cleaning. Stability and kinetic boundaries of the cleaned InAs(100) surfaces against oxidation have also been experimentally derived and studied by NRA. These results are important not only to prepare clean surfaces of InAs, but also to understand fundamentals of oxide/III-V semiconductor interfaces.},
doi = {10.1063/1.2740200},
journal = {Applied Physics Letters, 90(20)},
number = 20,
volume = 90,
place = {United States},
year = {Mon May 14 00:00:00 EDT 2007},
month = {Mon May 14 00:00:00 EDT 2007}
}