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Title: Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

Abstract

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

Inventors:
 [1];  [2];  [1];  [3]
  1. Livermore, CA
  2. (Patterson, CA)
  3. Cupertino, CA
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
909427
Patent Number(s):
7,224,041
Application Number:
10/856,175
Assignee:
The Regents of the University of California (Oakland, CA) OAK
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, and Wu, Kuang Jen J. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate. United States: N. p., 2007. Web.
Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, & Wu, Kuang Jen J. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate. United States.
Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, and Wu, Kuang Jen J. Tue . "Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate". United States. doi:. https://www.osti.gov/servlets/purl/909427.
@article{osti_909427,
title = {Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate},
author = {Sherohman, John W and Coombs, III, Arthur W. and Yee, Jick Hong and Wu, Kuang Jen J},
abstractNote = {For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 29 00:00:00 EDT 2007},
month = {Tue May 29 00:00:00 EDT 2007}
}

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