skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Chalcogenide glass nanostructures

Abstract

Chalcogenide nanowires and other micro-and nano scale structures are grown on a preselected portion of on a substrate. They are amorphous and of uniform composition and can be grown by a sublimation-condensation process onto the surface of an amorphous substrate. Among other uses, these structures can be used as coatings on optical fibers, as coatings on implants, as wispering galleries, in electrochemical devices, and in nanolasers.

Inventors:
 [1];  [1];  [2];  [1]
  1. Richland, WA
  2. Kennewick, WA
Publication Date:
Research Org.:
Pacific Northwest National Laboratory (PNNL), Richland, WA
Sponsoring Org.:
USDOE
OSTI Identifier:
909141
Patent Number(s):
7,211,296
Application Number:
10/646,264
Assignee:
Battelle Memorial Institute (Richland, WA) RLO
DOE Contract Number:
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Johnson, Bradley R, Schweiger, Michael J, MacIsaac, Brett D, and Sundaram, S Kamakshi. Chalcogenide glass nanostructures. United States: N. p., 2007. Web.
Johnson, Bradley R, Schweiger, Michael J, MacIsaac, Brett D, & Sundaram, S Kamakshi. Chalcogenide glass nanostructures. United States.
Johnson, Bradley R, Schweiger, Michael J, MacIsaac, Brett D, and Sundaram, S Kamakshi. Tue . "Chalcogenide glass nanostructures". United States. doi:. https://www.osti.gov/servlets/purl/909141.
@article{osti_909141,
title = {Chalcogenide glass nanostructures},
author = {Johnson, Bradley R and Schweiger, Michael J and MacIsaac, Brett D and Sundaram, S Kamakshi},
abstractNote = {Chalcogenide nanowires and other micro-and nano scale structures are grown on a preselected portion of on a substrate. They are amorphous and of uniform composition and can be grown by a sublimation-condensation process onto the surface of an amorphous substrate. Among other uses, these structures can be used as coatings on optical fibers, as coatings on implants, as wispering galleries, in electrochemical devices, and in nanolasers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}
}

Patent:

Save / Share:
  • The present invention includes a method of producing a segmented 1D nanostructure. The method includes providing a vessel containing a template wherein on one side of the template is a first metal reagent solution and on the other side of the template is a reducing agent solution, wherein the template comprises at least one pore; allowing a first segment of a 1D nanostructure to grow within a pore of the template until a desired length is reached; replacing the first metal reagent solution with a second metal reagent solution; allowing a second segment of a 1D nanostructure to grow frommore » the first segment until a desired length is reached, wherein a segmented 1D nanostructure is produced.« less
  • The invention comprises a RE-doped MA{sub 2} X{sub 4} crystalline gain medium, where M includes a divalent ion such as Mg, Ca, Sr, Ba, Pb, Eu, or Yb; A is selected from trivalent ions including Al, Ga, and In; X is one of the chalcogenide ions S, Se, and Te; and RE represents the trivalent rare earth ions. The MA{sub 2} X{sub 4} gain medium can be employed in a laser oscillator or a laser amplifier. Possible pump sources include diode lasers, as well as other laser pump sources. The laser wavelengths generated are greater than 3 microns, as becomesmore » possible because of the low phonon frequency of this host medium. The invention may be used to seed optical devices such as optical parametric oscillators and other lasers.« less
  • A nonaqueous secondary power supply comprises at least one cell, an electrolyte, negative electrode with active negative electrode material, and positive electrode with active positive electrode material. The active positive electrode material consists essentially of a transition-metal chalcogenide selected from the group consisting of niobium triselenide, tantalum trisulfide, titanium trisulfide, niobium trisulfide, and tantalum triselenide. The active positive electrode material has a fibrous structure that persists in both charged and discharged state in which the fibers are at least 1 micron in length and have aspect ratios from 5:1 to 1000:1.
  • A process is described for producing a chalogenide semiconductor material for use in photovoltaic semiconductor devices, the process comprising: a. forming a solution containing ions from at least one chalcogen and providing the solution with a pH in a range of 1-2 so as to provide the semiconductor material with suitable performance characteristics when used as the photovoltaic semiconductor device; b. forming a metal base layer containing a sufficient number of metal elements to form at least a ternary chalcogenide semiconductor material upon being chalcogenized with the solution; and c. contacting the metal base layer with the solution at aboutmore » ambient temperature so as to chalcogenize the metal base layer and form at least ternary chalcogenide semiconductor material.« less