A new inner layer silicon micro-strip detector for D0

Conference · Sun Jan 01 00:00:00 EST 2006 · Nucl.Instrum.Meth.A566:182-184,2006

DOI:https://doi.org/10.1016/j.nima.2006.05.134· OSTI ID:908849

Weber, Michael S

The D{O} experiment at the Fermilab Tevatron is building a new inner layer detector (Layer-0) to be installed inside the existing D{O} Silicon Micro-strip Tracker (SMT). The Layer-0 detector is based on R&D performed for the RunIIb silicon upgrade, which was canceled in the fall of 2003. Layer-0 will be installed between the bean pipe and the the 2.2cm radius opening available in the SMT support structure. The radius of the first sampling will be reduced from 2.7cm to 1.6cm. Layer-0 will be radiation harder than the current SMT, thus ensuring that the silicon tracker remains viable through Tevatron RunII.

• Research Organization: Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-07CH11359
• OSTI ID: 908849
• Report Number(s): FERMILAB-CONF-06-447-E; TRN: US0703785
• Journal Information: Nucl.Instrum.Meth.A566:182-184,2006, Conference: Prepared for Workshop on Tracking in High Multiplicity Environments (TIME 05), Zurich, Switzerland, 3-7 Oct 2005
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BEANS
FERMILAB TEVATRON
MULTIPLICITY
OPENINGS
RADIATIONS
SAMPLING
SILICON
Instrumentation