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Title: Origin of Charge Density at LaAlO 3 on SrTiO 3 Heterointerfaces: Possibility of Intrinsic Doping

Abstract

As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO{sub 3} and LaAlO{sub 3}. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
908755
Report Number(s):
SLAC-PUB-12540
Journal ID: ISSN 0031-9007; PRLTAO; TRN: US200722%%773
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 19
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE DENSITY; INTERFACES; STRONTIUM OXIDES; TITANIUM OXIDES; LANTHANUM OXIDES; ALUMINIUM OXIDES; CARRIER DENSITY; ANNEALING; MATHEMATICAL MODELS; CARRIER MOBILITY; Other,SYNCHRAD

Citation Formats

Siemons, Wolter, Koster, Gertjan, Yamamoto, Hideki, Harrison, Walter A., Lucovsky, Gerald, Geballe, Theodore H., Blank, Dave H. A., and Beasley, Malcolm R.. Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping. United States: N. p., 2007. Web. doi:10.1103/PhysRevLett.98.196802.
Siemons, Wolter, Koster, Gertjan, Yamamoto, Hideki, Harrison, Walter A., Lucovsky, Gerald, Geballe, Theodore H., Blank, Dave H. A., & Beasley, Malcolm R.. Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping. United States. doi:10.1103/PhysRevLett.98.196802.
Siemons, Wolter, Koster, Gertjan, Yamamoto, Hideki, Harrison, Walter A., Lucovsky, Gerald, Geballe, Theodore H., Blank, Dave H. A., and Beasley, Malcolm R.. Tue . "Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping". United States. doi:10.1103/PhysRevLett.98.196802. https://www.osti.gov/servlets/purl/908755.
@article{osti_908755,
title = {Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping},
author = {Siemons, Wolter and Koster, Gertjan and Yamamoto, Hideki and Harrison, Walter A. and Lucovsky, Gerald and Geballe, Theodore H. and Blank, Dave H. A. and Beasley, Malcolm R.},
abstractNote = {As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO{sub 3} and LaAlO{sub 3}. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.},
doi = {10.1103/PhysRevLett.98.196802},
journal = {Physical Review Letters},
number = 19,
volume = 98,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}
}