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Title: Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices

Abstract

A scanned, pulsed, focused laser irradiation apparatus can measure and image the photocurrent collection resulting from a dose-rate equivalent exposure to infrared laser light across an entire silicon die. Comparisons of dose-rate response images or time-delay images from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems allows precise identification of those specific age-affected circuit structures within a device that merit further quantitative analysis with targeted materials or electrical testing techniques. Another embodiment of the invention comprises a broad-beam, dose rate-equivalent exposure apparatus. The broad-beam laser irradiation apparatus can determine if aging has affected the device's overall functionality. This embodiment can be combined with the synchronized introduction of external electrical transients into a device under test to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure.

Inventors:
 [1]
  1. Albuquerque, NM
Publication Date:
Research Org.:
Sandia National Laboratories (SNL-NM), Albuquerque, NM
Sponsoring Org.:
USDOE
OSTI Identifier:
908537
Patent Number(s):
7,019,311
Assignee:
Sandia Corporation (Albuquerque, NM) ALO
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Horn, Kevin M. Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices. United States: N. p., 2006. Web.
Horn, Kevin M. Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices. United States.
Horn, Kevin M. Tue . "Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices". United States. doi:. https://www.osti.gov/servlets/purl/908537.
@article{osti_908537,
title = {Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices},
author = {Horn, Kevin M},
abstractNote = {A scanned, pulsed, focused laser irradiation apparatus can measure and image the photocurrent collection resulting from a dose-rate equivalent exposure to infrared laser light across an entire silicon die. Comparisons of dose-rate response images or time-delay images from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems allows precise identification of those specific age-affected circuit structures within a device that merit further quantitative analysis with targeted materials or electrical testing techniques. Another embodiment of the invention comprises a broad-beam, dose rate-equivalent exposure apparatus. The broad-beam laser irradiation apparatus can determine if aging has affected the device's overall functionality. This embodiment can be combined with the synchronized introduction of external electrical transients into a device under test to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 28 00:00:00 EST 2006},
month = {Tue Mar 28 00:00:00 EST 2006}
}

Patent:

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