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Title: Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors

Abstract

No abstract prepared.

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
908018
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 13, 30 March 2007; Related Information: Article No. 135506
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASYMMETRY; SOLAR ENERGY; PHYSICS; Solar Energy - Photovoltaics; Basic Sciences

Citation Formats

Yan, Y., Li, J., Wei, S.-H., and Al-Jassim, M. M. Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors. United States: N. p., 2007. Web. doi:10.1103/PhysRevLett.98.135506.
Yan, Y., Li, J., Wei, S.-H., & Al-Jassim, M. M. Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors. United States. doi:10.1103/PhysRevLett.98.135506.
Yan, Y., Li, J., Wei, S.-H., and Al-Jassim, M. M. Fri . "Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors". United States. doi:10.1103/PhysRevLett.98.135506.
@article{osti_908018,
title = {Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors},
author = {Yan, Y. and Li, J. and Wei, S.-H. and Al-Jassim, M. M.},
abstractNote = {No abstract prepared.},
doi = {10.1103/PhysRevLett.98.135506},
journal = {Physical Review Letters},
number = 13, 30 March 2007,
volume = 98,
place = {United States},
year = {Fri Mar 30 00:00:00 EDT 2007},
month = {Fri Mar 30 00:00:00 EDT 2007}
}