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Title: Reticle stage based linear dosimeter

Abstract

A detector to measure EUV intensity employs a linear array of photodiodes. The detector is particularly suited for photolithography systems that includes: (i) a ringfield camera; (ii) a source of radiation; (iii) a condenser for processing radiation from the source of radiation to produce a ringfield illumination field for illuminating a mask; (iv) a reticle that is positioned at the ringfield camera's object plane and from which a reticle image in the form of an intensity profile is reflected into the entrance pupil of the ringfield camera, wherein the reticle moves in a direction that is transverse to the length of the ringfield illumination field that illuminates the reticle; (v) detector for measuring the entire intensity along the length of the ringfield illumination field that is projected onto the reticle; and (vi) a wafer onto which the reticle imaged is projected from the ringfield camera.

Inventors:
 [1]
  1. Livermore, CA
Publication Date:
Research Org.:
Sandia National Laboratories (SNL-CA), Livermore, CA
Sponsoring Org.:
USDOE
OSTI Identifier:
907949
Patent Number(s):
7,196,771
Application Number:
11/087,996
Assignee:
EUV LLC (Santa Clara, CA) SNL-L
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
61 RADIATION PROTECTION AND DOSIMETRY

Citation Formats

Berger, Kurt W. Reticle stage based linear dosimeter. United States: N. p., 2007. Web.
Berger, Kurt W. Reticle stage based linear dosimeter. United States.
Berger, Kurt W. Tue . "Reticle stage based linear dosimeter". United States. doi:. https://www.osti.gov/servlets/purl/907949.
@article{osti_907949,
title = {Reticle stage based linear dosimeter},
author = {Berger, Kurt W},
abstractNote = {A detector to measure EUV intensity employs a linear array of photodiodes. The detector is particularly suited for photolithography systems that includes: (i) a ringfield camera; (ii) a source of radiation; (iii) a condenser for processing radiation from the source of radiation to produce a ringfield illumination field for illuminating a mask; (iv) a reticle that is positioned at the ringfield camera's object plane and from which a reticle image in the form of an intensity profile is reflected into the entrance pupil of the ringfield camera, wherein the reticle moves in a direction that is transverse to the length of the ringfield illumination field that illuminates the reticle; (v) detector for measuring the entire intensity along the length of the ringfield illumination field that is projected onto the reticle; and (vi) a wafer onto which the reticle imaged is projected from the ringfield camera.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 27 00:00:00 EDT 2007},
month = {Tue Mar 27 00:00:00 EDT 2007}
}

Patent:

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  • A detector to measure EUV intensity employs a linear array of photodiodes. The detector is particularly suited for photolithography systems that includes: (i) a ringfield camera; (ii) a source of radiation; (iii) a condenser for processing radiation from the source of radiation to produce a ringfield illumination field for illuminating a mask; (iv) a reticle that is positioned at the ringfield camera's object plane and from which a reticle image in the form of an intensity profile is reflected into the entrance pupil of the ringfield camera, wherein the reticle moves in a direction that is transverse to the lengthmore » of the ringfield illumination field that illuminates the reticle; (v) detector for measuring the entire intensity along the length of the ringfield illumination field that is projected onto the reticle; and (vi) a wafer onto which the reticle imaged is projected from the ringfield camera.« less
  • A system utilizing multi-stage traps based on dielectrophoresis. Traps with electrodes arranged transverse to the flow and traps with electrodes arranged parallel to the flow with combinations of direct current and alternating voltage are used to trap, concentrate, separate, and/or purify target particles.
  • A microelectromechanical (MEM) device for redirecting incident light is disclosed. The MEM device utilizes a pair of electrostatic actuators formed one above the other from different stacked and interconnected layers of polysilicon to move or tilt an overlying light-reflective plate (i.e. a mirror) to provide a reflected component of the incident light which can be shifted in phase or propagation angle. The MEM device, which utilizes leveraged bending to provide a relatively-large vertical displacement up to several microns for the light-reflective plate, has applications for forming an electrically-programmable diffraction grating (i.e. a polychromator) or a micromirror array.
  • A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashingmore » illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.« less
  • A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashingmore » illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.« less