Half Metallic Digital Ferromagnetic Heterostructure Composed of a (Delta)-doped Layer of Mn in Si

Qian, M C; Fong, C Y; Liu, K; Pickett, W E; Pask, J E; Yang, L H

Title: Half Metallic Digital Ferromagnetic Heterostructure Composed of a (Delta)-doped Layer of Mn in Si

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Abstract

The authors propose and investigate the properties of a digital ferromagnetic heterostructure (DFH) consisting of a {delta}-doped layer of Mn in Si, using ab initio electronic-structure methods. They find that (1) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (2) the heterostructure is a two-dimensional half metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-d and nearest-neighbor Si-p states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. Analysis of the total and partial densities of states, band structure, Fermi surfaces and associated charge density reveals the marked two-dimensional nature of the half metallicity. The band lineup is found to be favorable for retaining the half metal character to near the Curie temperature (T{sub C}). Being Si based and possibly having a high T{sub C} as suggested by an experiment on dilutely doped Mn in Si, the heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.

Authors:: Qian, M C; Fong, C Y; Liu, K; Pickett, W E; Pask, J E; Yang, L H

Publication Date:: Tue May 30 00:00:00 EDT 2006

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 907868

Report Number(s):: UCRL-JRNL-221761
Journal ID: ISSN 0031-9007; PRLTAO; TRN: US0703339

DOE Contract Number:: W-7405-ENG-48

Resource Type:: Journal Article

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 96; Journal ID: ISSN 0031-9007

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE DENSITY; CURIE POINT; ELECTRONIC STRUCTURE; FERMI LEVEL

Citation Formats


                    Qian, M C, Fong, C Y, Liu, K, Pickett, W E, Pask, J E, and Yang, L H. Half Metallic Digital Ferromagnetic Heterostructure Composed of a (Delta)-doped Layer of Mn in Si.  United States: N. p., 2006. 
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                    Qian, M C, Fong, C Y, Liu, K, Pickett, W E, Pask, J E, & Yang, L H. Half Metallic Digital Ferromagnetic Heterostructure Composed of a (Delta)-doped Layer of Mn in Si.  United States.

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                    Qian, M C, Fong, C Y, Liu, K, Pickett, W E, Pask, J E, and Yang, L H. 2006.  
        "Half Metallic Digital Ferromagnetic Heterostructure Composed of a (Delta)-doped Layer of Mn in Si".  United States.  https://www.osti.gov/servlets/purl/907868.

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@article{osti_907868,

  title        = {Half Metallic Digital Ferromagnetic Heterostructure Composed of a (Delta)-doped Layer of Mn in Si},

  author       = {Qian, M C and Fong, C Y and Liu, K and Pickett, W E and Pask, J E and Yang, L H},

  abstractNote = {The authors propose and investigate the properties of a digital ferromagnetic heterostructure (DFH) consisting of a {delta}-doped layer of Mn in Si, using ab initio electronic-structure methods. They find that (1) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (2) the heterostructure is a two-dimensional half metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-d and nearest-neighbor Si-p states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. Analysis of the total and partial densities of states, band structure, Fermi surfaces and associated charge density reveals the marked two-dimensional nature of the half metallicity. The band lineup is found to be favorable for retaining the half metal character to near the Curie temperature (T{sub C}). Being Si based and possibly having a high T{sub C} as suggested by an experiment on dilutely doped Mn in Si, the heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/907868},
  journal      = {Physical Review Letters},

  issn         = {0031-9007},

  number       = ,

  volume       = 96,

  place        = {United States},

  year         = {Tue May 30 00:00:00 EDT 2006},

  month        = {Tue May 30 00:00:00 EDT 2006}

}

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