Heavy-fermion semiconductor behavior of the SU({ital N}{sub {ital d}}) Anderson lattice model
- China Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080 (China)
The heavy-fermion semiconductor behavior of the SU({ital N}{sub {ital d}}) Anderson lattice model is examined by using the slave-boson technique within the framework of mean-field theory. The results show that the slave-boson mean-field theory of this model can present a heavy Fermi liquid or a heavy-fermion semiconductor ground state for different {ital n} values ({ital n} is the total number of the conduction and the on-site {ital f} electrons per lattice site), thus providing a unified description of the heavy Fermi liquid and the heavy-fermion semiconductor. The basic features of this theory are in qualitative agreement with the experimentally observed heavy-fermion semiconductor behavior of some rare-earth compounds.
- OSTI ID:
- 90534
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 52, Issue 8; Other Information: PBD: 15 Aug 1995
- Country of Publication:
- United States
- Language:
- English
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