On {ital p}-type doping in GaN---acceptor binding energies
- Lawrence Berkeley Laboratory and University of California, Berkeley, California 94720 (United States)
- Technische Universitaet Muenchen, Physik-Department E16, 85747 Garching (Germany)
Photoluminescence investigations on undoped {ital n}-type GaN layers grown on 6H-SiC and sapphire reveal the presence of residual acceptors with a binding energy of 230 meV. Their presence in high temperature vapor phase epitaxy grown layers is strongly correlated with the graphite susceptor containing the Ga. Mg as a contamination can be ruled out. In metal organic vapor phase epitaxially grown layers, the metal organic are probably the source of the carbon contamination. It is concluded that carbon on nitrogen sites introduces the most shallow acceptor in GaN. The experimental observations are supported by an estimate of the acceptor binding energy using effective-mass-theory. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 90469
- Journal Information:
- Applied Physics Letters, Vol. 67, Issue 9; Other Information: PBD: 28 Aug 1995
- Country of Publication:
- United States
- Language:
- English
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