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Title: Method of transferring a thin crystalline semiconductor layer

Abstract

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Inventors:
 [1];  [2];  [3]
  1. Sante Fe, NM
  2. Los Alamos, NM
  3. Mesa, AZ
Publication Date:
Research Org.:
University of California; Los Alamos National Laboratory (LANL), Los Alamos, NM
Sponsoring Org.:
USDOE
OSTI Identifier:
904223
Patent Number(s):
7,153,761
Application Number:
11/243,010
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM) LANL
DOE Contract Number:
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Nastasi, Michael A, Shao, Lin, and Theodore, N David. Method of transferring a thin crystalline semiconductor layer. United States: N. p., 2006. Web.
Nastasi, Michael A, Shao, Lin, & Theodore, N David. Method of transferring a thin crystalline semiconductor layer. United States.
Nastasi, Michael A, Shao, Lin, and Theodore, N David. Tue . "Method of transferring a thin crystalline semiconductor layer". United States. doi:. https://www.osti.gov/servlets/purl/904223.
@article{osti_904223,
title = {Method of transferring a thin crystalline semiconductor layer},
author = {Nastasi, Michael A and Shao, Lin and Theodore, N David},
abstractNote = {A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 26 00:00:00 EST 2006},
month = {Tue Dec 26 00:00:00 EST 2006}
}

Patent:

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  • A process for producing multi-layer semiconductor devices wherein a plurality of Plasma deposition chambers, an entrance and an exit chamber are provided sequentially with shutter means between them. A different layer is laid down in each chamber on a substrate as it passes sequentially through the system of chambers. During deposition, the shutters are closed. After each deposition, the Plasmas are extinguished, the chambers are evacuated or purged, the shutters are opened, the substrates are advanced to the next chamber, the chambers are refilled with the same reactant gases as previously present, the plasmas reignited and another layer deposited.
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