Method of transferring a thin crystalline semiconductor layer
Patent
·
OSTI ID:904223
- Sante Fe, NM
- Los Alamos, NM
- Mesa, AZ
A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.
- Research Organization:
- University of California; Los Alamos National Laboratory (LANL), Los Alamos, NM
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-36
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 7,153,761
- Application Number:
- 11/243,010
- OSTI ID:
- 904223
- Country of Publication:
- United States
- Language:
- English
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
|
journal | January 1986 |
Epitaxial layer transfer by bond and etch back of porous Si
|
journal | April 1994 |
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