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Title: Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

Patent ·
OSTI ID:902813
 [1];  [1];  [1]
  1. Albuquerque, NM
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An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
7,173,295
Application Number:
10/463,058
OSTI ID:
902813
Country of Publication:
United States
Language:
English

References (7)

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conference January 2001
A compact, repetitive accelerator for military and industrial applications report April 1998
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Properties of high gain GaAs switches for pulsed power applications
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conference January 1997
Longevity of optically activated, high gain GaAs photoconductive semiconductor switches journal January 1998
Device Technology Investigation: Subsystems Packaging Study: Feasibility of PCSS - Based Pulser for Highly Portable Platforms report July 2002

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