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Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

Patent ·
OSTI ID:902813
 [1];  [1];  [1]
  1. Albuquerque, NM
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An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM
Sponsoring Organization:
United States Department of Energy
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
7,173,295
Application Number:
10/463,058
OSTI ID:
902813
Country of Publication:
United States
Language:
English

References (7)

A compact, repetitive accelerator for military and industrial applications report April 1998
Photoconductive semiconductor switches journal April 1997
Fireset applications of improved longevity optically activated GaAs photoconductive semiconductor switches
  • Mar, A.; Loubriel, G. M.; Zutavern, F. J.
  • PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Technical Papers, PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251) https://doi.org/10.1109/PPPS.2001.1002019
conference January 2001
Longevity of optically activated, high gain GaAs photoconductive semiconductor switches journal January 1998
Properties of high gain GaAs switches for pulsed power applications
  • Zutavern, F. J.; Loubriel, G. M.; Hjalmarson, H. P.
  • Digest of Technical Papers 11th IEEE International Pulsed Power Conference, Digest of Technical Papers. 11th IEEE International Pulsed Power Conference (Cat. No.97CH36127) https://doi.org/10.1109/PPC.1997.674517
conference January 1997
High-gain GaAs photoconductive semiconductor switches (PCSS): device lifetime, high-current testing, optical pulse generators conference January 1995
Device Technology Investigation: Subsystems Packaging Study: Feasibility of PCSS - Based Pulser for Highly Portable Platforms report July 2002

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