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Title: Photovoltaic and thermophotovoltaic devices with quantum barriers

Abstract

A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.

Inventors:
 [1]
  1. Jefferson Hills, PA
Publication Date:
Research Org.:
Bettis Atomic Power Laboratory (BAPL), West Mifflin, PA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
902759
Patent Number(s):
7,202,411
Application Number:
10/426,802
Assignee:
United States of America Department of Energy (Washington, DC) BAPL
DOE Contract Number:  
AC11-93PN38195
Resource Type:
Patent
Resource Relation:
Patent File Date: 2003 May 01
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE

Citation Formats

Wernsman, Bernard R. Photovoltaic and thermophotovoltaic devices with quantum barriers. United States: N. p., 2007. Web.
Wernsman, Bernard R. Photovoltaic and thermophotovoltaic devices with quantum barriers. United States.
Wernsman, Bernard R. Tue . "Photovoltaic and thermophotovoltaic devices with quantum barriers". United States. doi:. https://www.osti.gov/servlets/purl/902759.
@article{osti_902759,
title = {Photovoltaic and thermophotovoltaic devices with quantum barriers},
author = {Wernsman, Bernard R},
abstractNote = {A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}

Patent:

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