skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Infra-red detector and method of making and using same

Abstract

A low-cost infra-red detector is disclosed including a method of making and using the same. The detector employs a substrate, a filtering layer, a converting layer, and a diverter to be responsive to wavelengths up to about 1600 nm. The detector is useful for a variety of applications including spectroscopy, imaging, and defect detection.

Inventors:
 [1];  [2]
  1. Richland, WA
  2. Kennewick, WA
Publication Date:
Research Org.:
Pacific Northwest National Laboratory (PNNL), Richland, WA
Sponsoring Org.:
USDOE
OSTI Identifier:
902648
Patent Number(s):
7,180,065
Application Number:
10/957,091
Assignee:
Battelle Memorial Institute (Richland, WA) BMI
DOE Contract Number:
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Craig, Richard A, and Griffin, Jeffrey W. Infra-red detector and method of making and using same. United States: N. p., 2007. Web.
Craig, Richard A, & Griffin, Jeffrey W. Infra-red detector and method of making and using same. United States.
Craig, Richard A, and Griffin, Jeffrey W. Tue . "Infra-red detector and method of making and using same". United States. doi:. https://www.osti.gov/servlets/purl/902648.
@article{osti_902648,
title = {Infra-red detector and method of making and using same},
author = {Craig, Richard A and Griffin, Jeffrey W},
abstractNote = {A low-cost infra-red detector is disclosed including a method of making and using the same. The detector employs a substrate, a filtering layer, a converting layer, and a diverter to be responsive to wavelengths up to about 1600 nm. The detector is useful for a variety of applications including spectroscopy, imaging, and defect detection.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 20 00:00:00 EST 2007},
month = {Tue Feb 20 00:00:00 EST 2007}
}

Patent:

Save / Share:
  • In the manufacture of an infra-red detector device, at least a portion of a surface of a body of mercury cadmium telluride is subjected to a conversion treatment to produce a surface layer, after which a heating step is performed. The present invention involves a simple and reproducible process for forming in the body a p-n junction of sufficiently good quality for such a detector which can be of a planar form so as to facilitate the formation of the detector element arrays in the body and the provision of contacts to the detector elements.
  • A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.
  • A mercury-cadmium-telluride (HgCdTe) epitaxial detector array is formed on a cadmium telluride (CdTe) substrate. Connecting leads to the detectors are a molybdenum layer covered by a gold-germanium layer. These leads have excellent matches for the thermal coefficients of expansion of the HgCdTe and CdTe and provide ohmic contacts such that the D of the array is greater than that of arrays made by prior processes using known lead materials, and the noise level is reduced by a factor of approximately three.
  • An improved strip detector and a method for making such a detector are described. A high resistivity N conduction semiconductor body has electrode strips formed thereon by diffusion. The strips are formed so as to be covered by an oxide layer at the surface point of the PN junction and in which the opposite side of the semiconductor body then has a substantial amount of material etched away to form a thin semiconductor upon which strip electrodes which are perpendicular to the electrodes on the first side are then placed.