La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode technology for Pb(Zr, Ti)O{sub 3} thin film nonvolatile memories

Tuttle, B A; Al-Shareef, H N; Warren, W L; Raymond, M V; Headley, T J; Voigt, J A

Title: La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode technology for Pb(Zr, Ti)O{sub 3} thin film nonvolatile memories

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Abstract

Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O{sub 3} (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO{sub 2} electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550{degrees}C or 675{degrees}C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 10{sup 10} cycles.

Authors:: Tuttle, B A; Al-Shareef, H N; Warren, W L; Raymond, M V; Headley, T J; Voigt, J A

Publication Date:: Sat Jul 01 00:00:00 EDT 1995

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)

OSTI Identifier:: 90243

Report Number(s):: SAND-95-1374C; CONF-950728-1
ON: DE95014863

DOE Contract Number:: AC04-94AL85000

Resource Type:: Conference

Resource Relation:: Conference: 1. European meeting on integrated ferroelectricity, Nijmegen (Netherlands), 4-8 Jul 1995; Other Information: PBD: [1995]

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 36 MATERIALS SCIENCE; LANTHANUM OXIDES; SPUTTERING; STRONTIUM OXIDES; COBALT OXIDES; CAPACITORS; SEMICONDUCTOR MATERIALS; PZT; COATINGS; ELECTRODES; FATIGUE; MICROSTRUCTURE; HYSTERESIS; THIN FILMS; MATERIALS TESTING

Citation Formats


                    Tuttle, B A, Al-Shareef, H N, Warren, W L, Raymond, M V, Headley, T J, and Voigt, J A. La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode technology for Pb(Zr, Ti)O{sub 3} thin film nonvolatile memories.  United States: N. p., 1995. 
        Web.

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                    Tuttle, B A, Al-Shareef, H N, Warren, W L, Raymond, M V, Headley, T J, & Voigt, J A. La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode technology for Pb(Zr, Ti)O{sub 3} thin film nonvolatile memories.  United States.

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                    Tuttle, B A, Al-Shareef, H N, Warren, W L, Raymond, M V, Headley, T J, and Voigt, J A. 1995.  
        "La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode technology for Pb(Zr, Ti)O{sub 3} thin film nonvolatile memories".  United States.  https://www.osti.gov/servlets/purl/90243.

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@article{osti_90243,

  title        = {La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode technology for Pb(Zr, Ti)O{sub 3} thin film nonvolatile memories},

  author       = {Tuttle, B A and Al-Shareef, H N and Warren, W L and Raymond, M V and Headley, T J and Voigt, J A},

  abstractNote = {Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O{sub 3} (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO{sub 2} electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550{degrees}C or 675{degrees}C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 10{sup 10} cycles.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/90243},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Sat Jul 01 00:00:00 EDT 1995},

  month        = {Sat Jul 01 00:00:00 EDT 1995}

}

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