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Title: Nonlinear Properties of Thin Ferroelectric Film-Based Capacitors at Elevated Microwave Power

Abstract

No abstract prepared.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
902164
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 89; Journal Issue: 23, 2006; Related Information: Article No. 232901
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITORS; SOLAR ENERGY; NATIONAL RENEWABLE ENERGY LABORATORY; Solar Energy - Photovoltaics

Citation Formats

Soldatenkov, O., Samoilova, T., Ivanov, A., Kozyrev, A., Ginley, D., and Kaydanova, T. Nonlinear Properties of Thin Ferroelectric Film-Based Capacitors at Elevated Microwave Power. United States: N. p., 2006. Web. doi:10.1063/1.2399336.
Soldatenkov, O., Samoilova, T., Ivanov, A., Kozyrev, A., Ginley, D., & Kaydanova, T. Nonlinear Properties of Thin Ferroelectric Film-Based Capacitors at Elevated Microwave Power. United States. doi:10.1063/1.2399336.
Soldatenkov, O., Samoilova, T., Ivanov, A., Kozyrev, A., Ginley, D., and Kaydanova, T. Sun . "Nonlinear Properties of Thin Ferroelectric Film-Based Capacitors at Elevated Microwave Power". United States. doi:10.1063/1.2399336.
@article{osti_902164,
title = {Nonlinear Properties of Thin Ferroelectric Film-Based Capacitors at Elevated Microwave Power},
author = {Soldatenkov, O. and Samoilova, T. and Ivanov, A. and Kozyrev, A. and Ginley, D. and Kaydanova, T.},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.2399336},
journal = {Applied Physics Letters},
number = 23, 2006,
volume = 89,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}
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  • Epitaxial growth of Ba{sub 0.6}Sr{sub 0.4}Ti{sub 1-x}Zr{sub x}O{sub 3} (0{<=}x{<=}0.3) composition spread thin film library on SrRuO{sub 3}/SrTiO{sub 3} layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition of the library is described, resulting from the interplay between epitaxial stress, increased chemical pressure, and reduced elastic energy upon Zr doping. Statistical and temperature-related capacitive measurements across the library showed unexpected variations in the dielectric properties. Doping windows with enhancedmore » permittivity and tunability are identified, and correlated to microstructural properties.« less
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  • Large-scale integrated fabrication in a H{sub 2} containing atmosphere, for example, during the passivation process, can cause serious damage in metal/Pb(Zr,Ti)O{sub 3}/metal capacitors (i.e., Pt/PZT/Pt capacitors). To reveal the cause of the H{sub 2} damage, we investigated the behavior of hysteresis curves and the leakage current of capacitors with a top electrode of Pt, Pd, Au, or Ag. Capacitors with a top electrode of Au or Ag are more resistant to the H{sub 2} annealing damage than those of Pt or Pd. We found that the H{sub 2} damage was strongly affected by the catalytic activity and adsorptive properties ofmore » the top electrode when exposed to H{sub 2}. {copyright} {ital 1997 American Institute of Physics.}« less