skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Direct-Write InkJet Printing for Fabrication of Barium Strontium Titanate-Based Tunable Circuits

Abstract

No abstract prepared.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
902093
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Thin Solid Films; Journal Volume: 515; Journal Issue: 7-8, 2007
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; BARIUM; FABRICATION; STRONTIUM; Solar Energy - Photovoltaics

Citation Formats

Kaydanova, T., Miedaner, A., Perkins, J. D., Curtis, C., Alleman, J. L., and Ginley, D. S. Direct-Write InkJet Printing for Fabrication of Barium Strontium Titanate-Based Tunable Circuits. United States: N. p., 2007. Web. doi:10.1016/j.tsf.2006.10.009.
Kaydanova, T., Miedaner, A., Perkins, J. D., Curtis, C., Alleman, J. L., & Ginley, D. S. Direct-Write InkJet Printing for Fabrication of Barium Strontium Titanate-Based Tunable Circuits. United States. doi:10.1016/j.tsf.2006.10.009.
Kaydanova, T., Miedaner, A., Perkins, J. D., Curtis, C., Alleman, J. L., and Ginley, D. S. Mon . "Direct-Write InkJet Printing for Fabrication of Barium Strontium Titanate-Based Tunable Circuits". United States. doi:10.1016/j.tsf.2006.10.009.
@article{osti_902093,
title = {Direct-Write InkJet Printing for Fabrication of Barium Strontium Titanate-Based Tunable Circuits},
author = {Kaydanova, T. and Miedaner, A. and Perkins, J. D. and Curtis, C. and Alleman, J. L. and Ginley, D. S.},
abstractNote = {No abstract prepared.},
doi = {10.1016/j.tsf.2006.10.009},
journal = {Thin Solid Films},
number = 7-8, 2007,
volume = 515,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-..mu..m and 1-..mu..m-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si (100) substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logicmore » gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously.« less
  • Abstract not provided.
  • A tunable metamaterial with resonance frequency at terahertz (THz) was developed. Electromagnetic response of the metamaterial was characterized with THz time domain spectrometer at various direct current electric fields. The resonance frequency increased monotonously with increasing electric field. The finite difference time domain method was used to simulate the transmission spectra of the metamaterial at THz frequencies. By comparing the simulated resonance frequency with the experimental curve, dielectric property of the Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST60) thin film at THz, over 0–33 kV/cm, was evaluated.
  • Piezoelectric properties of epitaxial (001) barium strontium titanate (BST) films are computed as functions of composition, misfit strain, and temperature using a non-linear thermodynamic model. Results show that through adjusting in-plane strains, a highly adaptive rhombohedral ferroelectric phase can be stabilized at room temperature with outstanding piezoelectric response exceeding those of lead based piezoceramics. Furthermore, by adjusting the composition and the in-plane misfit, an electrically tunable piezoelectric response can be obtained in the paraelectric state. These findings indicate that strain engineered BST films can be utilized in the development of electrically tunable and switchable surface and bulk acoustic wave resonators.
  • Loss reduction is critical to develop Ba{sub 1−x}Sr{sub x}TiO{sub 3} thin film tunable microwave dielectric components and dielectric energy storage devices. The presence of ferroelectricity, and hence the domain wall contributions to dielectric loss, will degrade the tunable performance in the microwave region. In this work, residual ferroelectricity—a persistent ferroelectric response above the global phase transition temperature—was characterized in tunable dielectrics using Rayleigh analysis. Chemical solution deposited Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} films, with relative tunabilities of 86% over 250 kV/cm at 100 kHz, demonstrated residual ferroelectricity 65 °C above the ostensible paraelectric transition temperature. Frequency dispersion observed in the dielectric temperature response wasmore » consistent with the presence of nanopolar regions as one source of residual ferroelectricity. The application of AC electric field for the Rayleigh analysis of these samples led to a doubling of the dielectric loss for fields over 10 kV/cm at room temperature.« less