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Title: III-V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN

Abstract

No abstract prepared.

Authors:
; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
902092
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Physical Chemistry B; Journal Volume: 110; Journal Issue: 50, 2006
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; NITRIDES; WATER; HYDROGEN; Hydrogen

Citation Formats

Deutsch, T. G., Koval, C. A., and Turner, J. A. III-V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN. United States: N. p., 2006. Web. doi:10.1021/jp0652805.
Deutsch, T. G., Koval, C. A., & Turner, J. A. III-V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN. United States. doi:10.1021/jp0652805.
Deutsch, T. G., Koval, C. A., and Turner, J. A. Sun . "III-V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN". United States. doi:10.1021/jp0652805.
@article{osti_902092,
title = {III-V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN},
author = {Deutsch, T. G. and Koval, C. A. and Turner, J. A.},
abstractNote = {No abstract prepared.},
doi = {10.1021/jp0652805},
journal = {Journal of Physical Chemistry B},
number = 50, 2006,
volume = 110,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}