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Title: Breakdown Physics of Low-Temperature Silicon Epitaxy Grown from Silane Radicals


No abstract prepared.

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Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
OSTI Identifier:
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 74; Journal Issue: 23, 2006; Related Information: Article No. 235428
Country of Publication:
United States

Citation Formats

Teplin, C. W., Iwaniczko, E., To, B., Moutinho, H., Stradins, P., and Branz, H. M. Breakdown Physics of Low-Temperature Silicon Epitaxy Grown from Silane Radicals. United States: N. p., 2006. Web. doi:10.1103/PhysRevB.74.235428.
Teplin, C. W., Iwaniczko, E., To, B., Moutinho, H., Stradins, P., & Branz, H. M. Breakdown Physics of Low-Temperature Silicon Epitaxy Grown from Silane Radicals. United States. doi:10.1103/PhysRevB.74.235428.
Teplin, C. W., Iwaniczko, E., To, B., Moutinho, H., Stradins, P., and Branz, H. M. Sun . "Breakdown Physics of Low-Temperature Silicon Epitaxy Grown from Silane Radicals". United States. doi:10.1103/PhysRevB.74.235428.
title = {Breakdown Physics of Low-Temperature Silicon Epitaxy Grown from Silane Radicals},
author = {Teplin, C. W. and Iwaniczko, E. and To, B. and Moutinho, H. and Stradins, P. and Branz, H. M.},
abstractNote = {No abstract prepared.},
doi = {10.1103/PhysRevB.74.235428},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 23, 2006,
volume = 74,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
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