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Title: Design of the First Ferromagnetic Piezoelectric (FINAL TECHNICAL REPORT)

Abstract

Abstract During the course of the grant we made the following scientific advances: • We developed a thorough understanding of piezoelectricity in antiferromagnetic wurtzite structure MnO. • We explained the absence of ferromagnetism in high quality samples of transition-metal-doped ZnO, and proposed a scheme for obtaining robust ferromagnetism in ZnO-based systems. • We demonstrated that the MgO-ZnO-CdO system is a promising candidate for the production of polarization field-effect transistors.

Authors:
 [1]
  1. (Hill), Nicola
Publication Date:
Research Org.:
The Regents of the University of California, Santa Barbara
Sponsoring Org.:
USDOE - Office of Energy Research (ER)
OSTI Identifier:
901634
Report Number(s):
02ER45986F
TRN: US201006%%619
DOE Contract Number:  
FG02-02ER45986
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DESIGN; FERROMAGNETISM; PIEZOELECTRICITY; POLARIZATION; PRODUCTION; TRANSISTORS; piezoelectricity, ZnO, ferromagnetics

Citation Formats

Spaldin. Design of the First Ferromagnetic Piezoelectric (FINAL TECHNICAL REPORT). United States: N. p., 2007. Web. doi:10.2172/901634.
Spaldin. Design of the First Ferromagnetic Piezoelectric (FINAL TECHNICAL REPORT). United States. doi:10.2172/901634.
Spaldin. Tue . "Design of the First Ferromagnetic Piezoelectric (FINAL TECHNICAL REPORT)". United States. doi:10.2172/901634. https://www.osti.gov/servlets/purl/901634.
@article{osti_901634,
title = {Design of the First Ferromagnetic Piezoelectric (FINAL TECHNICAL REPORT)},
author = {Spaldin},
abstractNote = {Abstract During the course of the grant we made the following scientific advances: • We developed a thorough understanding of piezoelectricity in antiferromagnetic wurtzite structure MnO. • We explained the absence of ferromagnetism in high quality samples of transition-metal-doped ZnO, and proposed a scheme for obtaining robust ferromagnetism in ZnO-based systems. • We demonstrated that the MgO-ZnO-CdO system is a promising candidate for the production of polarization field-effect transistors.},
doi = {10.2172/901634},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 03 00:00:00 EDT 2007},
month = {Tue Apr 03 00:00:00 EDT 2007}
}

Technical Report:

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