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Title: Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC

Abstract

We have investigated the effects of 200 and 300 keV electron-beam irradiations on amorphization in 6H-SiC at 100 and 295 K. Amorphization is induced by the accumulation of defects produced by direct atomic displacements. Dynamic recovery of these defects during irradiation, due to temperature increases and ionization effects, results in increases in the amorphization dose. By comparing with previous data for 2 MeV electron irradiations and 1.5 MeV Xe irradiations, the results demonstrate that ionization-enhanced recovery in 6H-SiC increases linearly with ionization rate above an ionization rate threshold.

Authors:
; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
901459
Report Number(s):
PNNL-SA-51542
Journal ID: ISSN 0003-6951; APPLAB; KC0201020; TRN: US0702583
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters, 90(12):121910; Journal Volume: 90; Journal Issue: 12
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC DISPLACEMENTS; ELECTRON BEAMS; IONIZATION; IRRADIATION; SILICON CARBIDES; HYDRATES; AMORPHOUS STATE; RADIATION EFFECTS; Silicon carbide; Radiation Damage; Electron Beam; Ionization; Recovery; Amorphization

Citation Formats

Bae, In-Tae, Weber, William J., Ishimaru, Manabu, and Hirotsu, Yoshihiko. Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC. United States: N. p., 2007. Web. doi:10.1063/1.2715135.
Bae, In-Tae, Weber, William J., Ishimaru, Manabu, & Hirotsu, Yoshihiko. Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC. United States. doi:10.1063/1.2715135.
Bae, In-Tae, Weber, William J., Ishimaru, Manabu, and Hirotsu, Yoshihiko. Mon . "Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC". United States. doi:10.1063/1.2715135.
@article{osti_901459,
title = {Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC},
author = {Bae, In-Tae and Weber, William J. and Ishimaru, Manabu and Hirotsu, Yoshihiko},
abstractNote = {We have investigated the effects of 200 and 300 keV electron-beam irradiations on amorphization in 6H-SiC at 100 and 295 K. Amorphization is induced by the accumulation of defects produced by direct atomic displacements. Dynamic recovery of these defects during irradiation, due to temperature increases and ionization effects, results in increases in the amorphization dose. By comparing with previous data for 2 MeV electron irradiations and 1.5 MeV Xe irradiations, the results demonstrate that ionization-enhanced recovery in 6H-SiC increases linearly with ionization rate above an ionization rate threshold.},
doi = {10.1063/1.2715135},
journal = {Applied Physics Letters, 90(12):121910},
number = 12,
volume = 90,
place = {United States},
year = {Mon Mar 19 00:00:00 EDT 2007},
month = {Mon Mar 19 00:00:00 EDT 2007}
}