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Title: Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches

Abstract

In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power.

Authors:
; ;
Publication Date:
Research Org.:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Org.:
USDOE
OSTI Identifier:
901262
Report Number(s):
SLAC-PUB-12407
TRN: US0702562
DOE Contract Number:
AC02-76SF00515
Resource Type:
Conference
Resource Relation:
Journal Name: AIP Conf.Proc.877:273-279,2006; Conference: Prepared for 12th Advanced Accelerator Concepts Workshop (AAC 2006), Lake Geneva, Wisconsin, 10-15 Jul 2006
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; ACCELERATORS; COMPRESSION; SEMICONDUCTOR SWITCHES; SILICON; WAVEGUIDES; Accelerators,ACCPHY

Citation Formats

Guo, J., Tantawi, S., and /SLAC. Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches. United States: N. p., 2007. Web.
Guo, J., Tantawi, S., & /SLAC. Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches. United States.
Guo, J., Tantawi, S., and /SLAC. Wed . "Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches". United States. doi:. https://www.osti.gov/servlets/purl/901262.
@article{osti_901262,
title = {Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches},
author = {Guo, J. and Tantawi, S. and /SLAC},
abstractNote = {In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power.},
doi = {},
journal = {AIP Conf.Proc.877:273-279,2006},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 21 00:00:00 EDT 2007},
month = {Wed Mar 21 00:00:00 EDT 2007}
}

Conference:
Other availability
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  • In this paper, we will present our recent results on the research of the ultra-fast high power RF switches based on silicon. We have developed a switch module at X-band which can use a silicon window as the switch. The switching is realized by generation of carriers in the bulk silicon. The carriers can be generated electrically or/and optically. The electrically controlled switches use PIN diodes to inject carrier. We have built the PIN diode switches at X-band, with <300ns switching time. The optically controlled switches use powerful lasers to excite carriers. By combining the laser excitation and electrical carriermore » generation, significant reduction in the required power of both the laser and the electrical driver is expected. High power test is under going.« less
  • In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out ofmore » the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power.« less
  • First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the systemmore » can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.« less
  • In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still anmore » open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.« less