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Title: Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches

Abstract

In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power.

Authors:
; ;
Publication Date:
Research Org.:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Org.:
USDOE
OSTI Identifier:
901262
Report Number(s):
SLAC-PUB-12407
TRN: US0702562
DOE Contract Number:
AC02-76SF00515
Resource Type:
Conference
Resource Relation:
Journal Name: AIP Conf.Proc.877:273-279,2006; Conference: Prepared for 12th Advanced Accelerator Concepts Workshop (AAC 2006), Lake Geneva, Wisconsin, 10-15 Jul 2006
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; ACCELERATORS; COMPRESSION; SEMICONDUCTOR SWITCHES; SILICON; WAVEGUIDES; Accelerators,ACCPHY

Citation Formats

Guo, J., Tantawi, S., and /SLAC. Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches. United States: N. p., 2007. Web.
Guo, J., Tantawi, S., & /SLAC. Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches. United States.
Guo, J., Tantawi, S., and /SLAC. Wed . "Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches". United States. doi:. https://www.osti.gov/servlets/purl/901262.
@article{osti_901262,
title = {Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches},
author = {Guo, J. and Tantawi, S. and /SLAC},
abstractNote = {In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power.},
doi = {},
journal = {AIP Conf.Proc.877:273-279,2006},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 21 00:00:00 EDT 2007},
month = {Wed Mar 21 00:00:00 EDT 2007}
}

Conference:
Other availability
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