Size dependence of melting of GaN nanowires with triangular cross sections
Journal Article
·
· Journal of Applied Physics, 101(4):043511
Molecular dynamics simulations have been used to study the melting of GaN nanowires with triangular cross-sections. The curve of the potential energy, along with the atomic configuration is used to monitor the phase transition. The thermal stability of GaN nanowires is dependent on the size of the nanowires. The melting temperature of the GaN nanowires increases with the increasing of area cross-section of the nanowires to a saturation value. An interesting result is that of the nanowires start to melt from the edges, then the surface, and extends to the inner regions of nanowires as temperature increases.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 901180
- Report Number(s):
- PNNL-SA-53257; JAPIAU; 8208; KC0201020; TRN: US200713%%83
- Journal Information:
- Journal of Applied Physics, 101(4):043511, Vol. 101, Issue 4; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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