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Title: High-Efficiency, Low-Voltage, Compound Semiconductor Devices for Microwave and MM-Wave Power Amplifiers

Abstract

Improvements in the last decade in InP materials growth, device processing techniques, characterization, and circuit design have enabled solid-state power performance through 122 GHz. Although originally targeted for low-noise and power performance at mm-wave frequencies (>30 GHz), InP HEMTs could become the preferred device for frequencies as low as 800 MHz. This investment has benefited the microwave frequency regime with higher efficiency and power densities at lower operating voltages. State-of-the-art microwave performance at lower operating voltage provides a path to smaller, lighter-weight systems in the battery operated arena of commercial and defense electronics. This paper describes an InP HEMT technology being investigated for many power and low-noise amplifier applications from UHF to W-band frequencies. Specifically the technology demonstrated 640mW/mm power density, 27 dB gain, and 84% power-added efficiency at L-band with a bias of 3.0 volts. Based on the author's literature search, this is a record efficiency at L-band with an operating voltage of less than 5 volts.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
9011
Report Number(s):
SAND99-1778C
TRN: AH200122%%129
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: State-of-the-Art Program on Compound Semiconductor XXXI, Honolulu, HI (US), 10/17/1999--10/22/1999; Other Information: PBD: 14 Jul 1999
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; DESIGN; EFFICIENCY; PERFORMANCE; POWER AMPLIFIERS; POWER DENSITY; SEMICONDUCTOR DEVICES; MICROWAVE AMPLIFIERS; INDIUM PHOSPHIDES

Citation Formats

Chao, P.C., Hietala, V.M., Kong, W., and Sloan, Lynn R. High-Efficiency, Low-Voltage, Compound Semiconductor Devices for Microwave and MM-Wave Power Amplifiers. United States: N. p., 1999. Web.
Chao, P.C., Hietala, V.M., Kong, W., & Sloan, Lynn R. High-Efficiency, Low-Voltage, Compound Semiconductor Devices for Microwave and MM-Wave Power Amplifiers. United States.
Chao, P.C., Hietala, V.M., Kong, W., and Sloan, Lynn R. Wed . "High-Efficiency, Low-Voltage, Compound Semiconductor Devices for Microwave and MM-Wave Power Amplifiers". United States. https://www.osti.gov/servlets/purl/9011.
@article{osti_9011,
title = {High-Efficiency, Low-Voltage, Compound Semiconductor Devices for Microwave and MM-Wave Power Amplifiers},
author = {Chao, P.C. and Hietala, V.M. and Kong, W. and Sloan, Lynn R.},
abstractNote = {Improvements in the last decade in InP materials growth, device processing techniques, characterization, and circuit design have enabled solid-state power performance through 122 GHz. Although originally targeted for low-noise and power performance at mm-wave frequencies (>30 GHz), InP HEMTs could become the preferred device for frequencies as low as 800 MHz. This investment has benefited the microwave frequency regime with higher efficiency and power densities at lower operating voltages. State-of-the-art microwave performance at lower operating voltage provides a path to smaller, lighter-weight systems in the battery operated arena of commercial and defense electronics. This paper describes an InP HEMT technology being investigated for many power and low-noise amplifier applications from UHF to W-band frequencies. Specifically the technology demonstrated 640mW/mm power density, 27 dB gain, and 84% power-added efficiency at L-band with a bias of 3.0 volts. Based on the author's literature search, this is a record efficiency at L-band with an operating voltage of less than 5 volts.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {7}
}

Conference:
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