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Title: Lithographic characterization of low-order aberrations in a 0.3-NAEUV microfield exposure tool

Abstract

Although tremendous progress has been made in the crucial area of fabrication of extreme ultraviolet (EUV) projection optics, the realization diffraction-limited high numerical aperture (NA) optics (above 0.2 NA) remains a concern. The highest NA EUV optics available to date are the 0.3-NA Microfield Exposure Tool (MET) optics used in an experimental exposure station at Lawrence Berkeley National Laboratory [1] and commercial METs [2] at Intel and SEMATECH-North. Even though these optics have been interferometrically demonstrated to achieve diffraction-limited wavefront quality, the question remains as to whether or not such performance levels can be maintained after installation of the optics into the exposure tool. Printing-based quantitative aberration measurements provide a convenient mechanism for the characterization of the optic wavefront error in the actual lithography tool. We present the lithographic measurement of low-order aberrations in the Berkeley MET tool, including a quantitative measurement of astigmatism and spherical error and a qualitative measurement of coma. The lithographic results are directly compared to interferometry results obtained from the same optic. Measurements of the Berkeley MET indicate either an alignment drift or errors in the interferometry on the order of 0.5 to 1 nm.

Authors:
; ; ;
Publication Date:
Research Org.:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Org.:
USDOE Director. Office of Science. Office of AdvancedScientific Computing Research. Office of Basic EnergySciences
OSTI Identifier:
901033
Report Number(s):
LBNL-60508
R&D Project: 509201; BnR: KC0202030; TRN: US200711%%760
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Conference
Resource Relation:
Conference: Emerging Lithographic Technologies X, San Jose,CA, 02/21/2006
Country of Publication:
United States
Language:
English
Subject:
36; ALIGNMENT; APERTURES; FABRICATION; INTERFEROMETRY; OPTICS; PERFORMANCE

Citation Formats

Naulleau, Patrick, Cain, Jason, Dean, Kim, and Goldberg, Kenneth A. Lithographic characterization of low-order aberrations in a 0.3-NAEUV microfield exposure tool. United States: N. p., 2006. Web.
Naulleau, Patrick, Cain, Jason, Dean, Kim, & Goldberg, Kenneth A. Lithographic characterization of low-order aberrations in a 0.3-NAEUV microfield exposure tool. United States.
Naulleau, Patrick, Cain, Jason, Dean, Kim, and Goldberg, Kenneth A. Wed . "Lithographic characterization of low-order aberrations in a 0.3-NAEUV microfield exposure tool". United States. doi:. https://www.osti.gov/servlets/purl/901033.
@article{osti_901033,
title = {Lithographic characterization of low-order aberrations in a 0.3-NAEUV microfield exposure tool},
author = {Naulleau, Patrick and Cain, Jason and Dean, Kim and Goldberg, Kenneth A.},
abstractNote = {Although tremendous progress has been made in the crucial area of fabrication of extreme ultraviolet (EUV) projection optics, the realization diffraction-limited high numerical aperture (NA) optics (above 0.2 NA) remains a concern. The highest NA EUV optics available to date are the 0.3-NA Microfield Exposure Tool (MET) optics used in an experimental exposure station at Lawrence Berkeley National Laboratory [1] and commercial METs [2] at Intel and SEMATECH-North. Even though these optics have been interferometrically demonstrated to achieve diffraction-limited wavefront quality, the question remains as to whether or not such performance levels can be maintained after installation of the optics into the exposure tool. Printing-based quantitative aberration measurements provide a convenient mechanism for the characterization of the optic wavefront error in the actual lithography tool. We present the lithographic measurement of low-order aberrations in the Berkeley MET tool, including a quantitative measurement of astigmatism and spherical error and a qualitative measurement of coma. The lithographic results are directly compared to interferometry results obtained from the same optic. Measurements of the Berkeley MET indicate either an alignment drift or errors in the interferometry on the order of 0.5 to 1 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 01 00:00:00 EST 2006},
month = {Wed Mar 01 00:00:00 EST 2006}
}

Conference:
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