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Title: Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport

Abstract

We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.

Authors:
; ; ;
Publication Date:
Research Org.:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Org.:
USDOE Director. Office of Science. Office of AdvancedScientific Computing Research. Office of Basic Energy Sciences. MaterialsSciences and Engineering Division, Office of Biological and EnvironmentalResearch. Pacific Northwest National Laboratory
OSTI Identifier:
900937
Report Number(s):
LBNL-60229
R&D Project: 513350; BnR: KC0201030; TRN: US200711%%657
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystal Growth and Design; Journal Volume: 6; Journal Issue: 8; Related Information: Journal Publication Date: 08/02/2006
Country of Publication:
United States
Language:
English
Subject:
36; CRYSTAL STRUCTURE; DEPOSITION; ELECTRON MICROSCOPY; GALLIUM; GALLIUM OXIDES; GOLD; INDIUM; INDIUM OXIDES; MONOCRYSTALS; OXIDES; SUBSTRATES; TIN OXIDES; TRANSPORT; VAPOR PRESSURE; X-RAY DIFFRACTION

Citation Formats

Johnson, M.C., Aloni, S., McCready, D.E., and Bourret-Courchesne, E.D.. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport. United States: N. p., 2006. Web. doi:10.1021/cg050524g.
Johnson, M.C., Aloni, S., McCready, D.E., & Bourret-Courchesne, E.D.. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport. United States. doi:10.1021/cg050524g.
Johnson, M.C., Aloni, S., McCready, D.E., and Bourret-Courchesne, E.D.. Mon . "Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport". United States. doi:10.1021/cg050524g. https://www.osti.gov/servlets/purl/900937.
@article{osti_900937,
title = {Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport},
author = {Johnson, M.C. and Aloni, S. and McCready, D.E. and Bourret-Courchesne, E.D.},
abstractNote = {We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.},
doi = {10.1021/cg050524g},
journal = {Crystal Growth and Design},
number = 8,
volume = 6,
place = {United States},
year = {Mon Mar 13 00:00:00 EST 2006},
month = {Mon Mar 13 00:00:00 EST 2006}
}
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